BFQ19S INFINEON | Alldatasheet
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/G01 For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 75 mA Base current IB 10 Total power dissipation TS /G01 85 °C 1) Ptot 1 W Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 65 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter ValuesSymbol Unit max.min. typ. DC characteristics V--15V(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 µACollector-emitter cutoff current VCE = 20 V, VBE = 0 -ICES 100- nACollector-base cutoff current VCB = 10 V, IE = 0 -ICBO - 100 µAEmitter-base cutoff current VEB = 2 V, IC = 0 IEBO 10-- -DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 1 1.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 4.4 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 2.5 dB Power gain, maximum available 1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 11.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 9.5 Third order intercept point I C = 70 mA, VCE = 8 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz IP3 - 35 - dBm
Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5