BFP93A VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • High power gain  Low noise figure  High transition frequency

Applications

RF amplifier up to GHz range. Mechanical Data Typ: BFP93A Case: SOT-143 Plastic case Weight: approx. 8.0 mg Marking: FE Pinning: 1 = Collector, 2 = Emitter 3 = Base, 4 = Emitter Typ: BFP93AW Case: SOT-343 Plastic case Weight: approx. 6.0 mg Marking: WFE Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 µm Cu Parameter Test condition Symbol Value Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 12 V Emitter-base voltage V EBO 2V Collector current I C 50 mA Total power dissipation T amb ≤ 60 °C P tot 200 mW Junction temperature T j 150 °C Storage temperature range T stg -65 to +150 °C Parameter Test condition Symbol Value Unit Junction ambient 1) RthJA 450 K/W

www.vishay.com Document Number 85020 Rev. 1.4, 03-Sep-04 VISHA YBFP93A / BFP93AW Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Ty p. Max Unit Collector-emitter cut-off current V CE = 20 V, VBE = 0 I CES 100 µA Collector-base cut-off current V CB = 15 V, IE = 0 I CBO 100 nA Emitter-base cut-off current V EB = 2 V, IC = 0 I EBO 10 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V (BR)CEO 12 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V CEsat 0.1 0.4 V DC forward current transfer ratio V CE = 5 V, IC = 30 mA h FE 40 90 150 Parameter Test condition Symbol Min Ty p. Max Unit Transition frequency V CE = 5 V, IC = 30 mA, f = 500 MHz fT 6G H z Collector-base capacitance V CB = 10 V, f = 1 MHz C cb 0.45 pF Collector-emitter capacitance V CE = 10 V, f = 1 MHz C ce 0.2 pF Emitter-base capacitance V EB = 0.5 V, f = 1 MHz C eb 1.25 pF Noise figure V CE = 8 V, ZS = 50 Ω, f = 800 MHz, IC = 5 mA F1 . 6 d B VCE = 8 V, ZS = 50 Ω, f = 800 MHz, IC = 25 mA F2 . 1 d B Power gain V CE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 25 mA, f = 800 MHz Gpe 17 dB VCE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 25 mA, f = 2 GHz Gpe 10 dB Linear output voltage - two tone intermodulation test VCE = 8 V, IC = 25 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω V1 = V2 260 mV Third order intercept point V CE = 8 V, IC = 25 mA, f = 800 MHz IP3 31 dBm

Rev. 1.4, 03-Sep-04 Vishay Semiconductors www.vishay.com Common Emitter S-Parameters Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified VCE/V IC/mA f/MHz S11 S21 S12 S22 LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

www.vishay.com Document Number 85020 Rev. 1.4, 03-Sep-04 VISHA YBFP93A / BFP93AW Vishay Semiconductors VCE/V IC/mA f/MHz S11 S21 S12 S22 LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

Rev. 1.4, 03-Sep-04 Vishay Semiconductors www.vishay.com VCE/V IC/mA f/MHz S11 S21 S12 S22 LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

Figure 5. Input Reflection Coefficient Figure 6. Reverse Transmission Coefficient

3.0 GHz

Figure 7. Forward Transmission Coefficient Figure 8. Output Reflection Coefficient

www.vishay.com Document Number 85020 Rev. 1.4, 03-Sep-04 VISHA YBFP93A / BFP93AW Vishay Semiconductors Package Dimensions in mm Package Dimensions in mm Mounting Pad Layout 96 12240 0.50(0.020) 0.35 (0.014) 1.8 (0.070) 1.6 (0.062) 0.9 (0.035) 0.75 (0.029) 1.4 (0.055) 1.2 (0.047) 2.0 (0.078) 1.8 (0.070) 3.0 (0.117) 2.8 (0.109) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.9 (0.035) 2.6 (0.101) 2.4 (0.094) ISO Method E 96 12237

Rev. 1.4, 03-Sep-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423