BFP740 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors BFP740 (KFP740) ■ Features

  • High gain ultra low noise RF transistor
  • High maximum stable gain
  • Gold metallization for extra high reliability
  • 150 GHz fT-Silicon Germanium technology
  • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz ■ Absolute Maximum Ratings Ta = 25℃ 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.050.3 +0.1 2±0.2 ±0.10.9 1 2 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. SOT-343

1 Base

2 Emitter

3 Collector

4 Emitter

Uint: mm Parameter Symbol Rating Unit Collector - Base Voltage VCBO 13 Collector - Emitter Voltage VCES 13 Collector - Emitter Voltage Ta > 0°C 4 Ta ≤ 0°C 3.5 Emitter - Base Voltage VEBO 1.2 Collector Current - Continuous IC 30 Base Current IB 3 Collector Power Dissipation PC 160 mW Junction - soldering point RthJS ≤380 ℃/W Junction Temperature TJ 150 Ambient temperature TA -65 to 150 Storage Temperature Range Tstg -65 to 150 VCEO V mA

www.kexin.com.cn2 Transistors NPN Transistors BFP740 (KFP740) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 13 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 4 4.7 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 1.2 Collector-base cut-off current ICBO VCB= 5 V , IE= 0 0.1 Collector- emitter cut-off current ICES VCE= 13 V ,VEBE= 0 30 Emitter cut-off current IEBO VEB= 1.2V , IC=0 3 DC current gain hFE VCE= 3V, IC= 25mA 160 400 Power gain, maximum stable Gms IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz (Note.1) 27 Power gain, maximum available Gma IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz (Note.1) 17 IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt 0.5 IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt 0.85 IC=25 mA,VCE =3 V, ZS = ZL =50 Ω,f=1.8GHz 24.5 IC=25 mA,VCE =3 V, ZS = ZL =50 Ω,f=6GHz 13.5 Third order intercept point at output IP3 VCE =3 V, IC = 25 mA, ZS=ZL=50 Ω, f=1.8GHz 25 1dB Compression point at output P-1dB IC= 25 mA, VCE = 3 V, ZS=ZL=50 Ω,f = 1.8GHz 11 Collector-base capacitance Ccb VCB= 3V, VBE= 0,f=1MHz 0.08 0.14 Collector-emitter capacitance Cce VCE= 3V, VBE= 0,f=1MHz 0.24 Emitter-base capacitance Ceb VEB= 0.5V, VCB= 0,f=1MHz 0.44 Transition frequency fT VCE= 3V, IC= 25mA,f=2GHz 42 GHz V uA pF Noise figure F Transducer gain |S21e| dB dBm Note.1: Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| ■ Marking Marking R7s

www.kexin.com.cn 3 Transistors NPN Transistors BFP740 (KFP740) ■ Typical Characterisitics Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 mW 180 P tot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WR thJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s TP 0 10 1 10 2 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 0 2 4 6 8 10 12 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 VCB [V] Ccb [pF]

www.kexin.com.cn4 Tran sistors NPN Transistors BFP740 (KFP740) ■ Typical Characterisitics Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 1.8 GHz 0 5 10 15 20 25 30 35 IC [mA] IP3 [dBm] 1.00V 2.00V 3.00V 4.00V Transition frequency fT = ƒ(IC) f = 2 GHz VCE = parameter 0 5 10 15 20 25 30 35 IC [mA] fT [GHz] 2V to 4V 1.00V 0.75V 0.50V Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 25 mA 0 1 2 3 4 5 6 f [GHz] G [dB] Gms Gma |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter 0 5 10 15 20 25 30 35 IC [mA] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz

www.kexin.com.cn 5 Transistors NPN Transistors BFP740 (KFP740) ■ Typical Characterisitics Power gain Gma, Gms = ƒ (VCE) IC = 25 mA f = parameter VCE [V] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz Noise figure F = ƒ(IC) VCE = 3V, f = parameter ZS = ZSopt 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ic [mA] F [dB] f = 3GHz f = 0.9GHz f = 6GHz f = 1.8GHz f = 5GHz Noise figure F = ƒ(IC) VCE = 3V, f = 1.8 GHz 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ic [mA] F [dB] ZS = 50Ω ZS = ZSopt Noise figure F = ƒ(f) VCE = 3 V, ZS = ZSopt 0 1 2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.2 1.4 F [dB] f [GHz] IC = 25mA IC = 8mA

www.kexin.com.cn6 Transistors NPN Transistors BFP740 (KFP740) ■ Typical Characterisitics Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 8 mA / 25 mA 10.2 0.4 2 40 1.5 −10 −1.5 0.5 −0.5 0.1 −0.1 0.2 −0.2 0.3 3 −0.3 −3 0.4 −0.4 6GHz Ic = 8mA 1.8GHz 3GHz 5GHz 0.9GHz Ic = 25mA 4GHz 2.4GHz 6GHz