BFP181W

BFP181W INFINEON | Alldatasheet

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/G01 For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA /G01 fT = 8 GHz F = 1.45 dB at 900 MHz VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP 181W RFs 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation, TS /G01 91 °C 1) Ptot 175 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS /G01 340 K/W 1TS is measured on the collector lead at the soldering point to the pcb

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values UnitSymbol min. max.typ. DC characteristics VV(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 12 -- µACollector-emitter cutoff current VCE = 20 V, VBE = 0 - 100-ICES Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues max.min. typ. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT 6 8 GHz- Ccb pF-Collector-base capacitance VCB = 10 V, f = 1 MHz 0.24 0.4 Collector-emitter capacitance VCE = 10 V, f = 1 MHz 0.27 --Cce Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 0.32 -Ceb - 1.45 1.8 F Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz dB GmsPower gain, maximum stable F) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz 16.5 16.5 11.5 |S21e|2Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz IC = 5 mA, VCE = 8 V 1Gms = |S21 / S12|

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BF = 96.461 - IKF = 0.12146 A BR = -16.504 IKR = 0.24951 A RB = 9.9037 /G01 RE = 2.1372 VJE = 0.73155 V XTF = 0.33814 - PTF = 0 deg MJC = 0.30013 - CJS = 0f F XTB = 0- FC = 0.99768 - IS = 0.0010519 fA VAF = 22.403 V NE = 1.7631 - VAR = V5.1127 NC = 1.6528 - RBM = /G016.6315 CJE = 1.8168 fF TF = ps17.028 ITF = 1.0549 mA VJC = 1.1633 V TR = ns2.7449 MJS = 0- XTI = 3 - NF = 0.90617 - ISE = 12.603 fA NR = 0.87757 - ISC = 0.01195 fA IRB = 0.69278 mA RC = 2.2171 /G01 MJE = 0.43619 - VTF = 0.12571 V CJC = 319.69 fF XCJC = 0.082903 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) /G01 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = 0.36 nH CBE = 68 fF CCB = 46 fF CCE = 232 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 120 140 160 mW 200 Ptot TS TA Permissible Pulse Load RthJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB) f = 1MHz 0 4 8 12 16 V 24 VCB 0.0 0.1 0.2 0.3 pF 0.5 Ccb Transition frequency fT = f (IC) VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC GHz fT 10V 0.7V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC dB G 10V 0.7V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC dB G 10V 0.7V

Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50/G02 ) VCE = Parameter, f = 900MHz 1 3 5 7 9 11 13 mA 17 IC dBm IP3 Power Gain Gma, Gms = f(VCE):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 0.9GHz 1.8GHz 1.8GHz IC=5mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=5mA Power Gain Gma, Gms = f(f) VCE = Parameter f dB G 10V 0.7V IC=5mA