BFP180W

BFP180W INFINEON | Alldatasheet

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/G01 For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz /G01 F = 2.1 dB at 900 MHz VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP 180W RDs 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation, TS /G01/G02 126°C 1) Ptot 30 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS /G01 785 K/W 1TS is measured on the collector lead at the soldering point to the pcb

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values UnitSymbol min. max.typ. DC characteristics VV(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 8 -- µACollector-emitter cutoff current VCE = 10 V, VBE = 0 - 100-ICES Collector-base cutoff current VCB = 8 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues max.min. typ. AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz fT 5 7 GHz- Ccb pF-Collector-base capacitance VCB = 5 V, f = 1 MHz 0.22 0.35 Collector-emitter capacitance VCE = 5 V, f = 1 MHz 0.27 --Cce Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 0.1 -Ceb - 2.1 2.25 F Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz dB GmsPower gain, maximum stable F) IC = 1 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz 11.5 |S21e|2Transducer gain IC = 1 mA, VCE = 5 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BF = 94.687 - IKF = 0.025252 A BR = -20.325 IKR = 0.012138 A RB = 1.4255 /G01 RE = 3.7045 /G01 VJE = 1.1812 V XTF = 0.3062 - PTF = 0 deg MJC = 0.30423 - CJS = 0f F XTB = 0- FC = 0.87906 - IS = 0.18519 fA VAF = 26.867 V NE = 1.9818 - VAR = V3.2134 NC = 1.6195 - RBM = /G0160 CJE = 3.2473 fF TF = ps14.866 ITF = 1.0202 mA VJC = 1.1812 V TR = ns2.2648 MJS = 0- XTI = 3 - NF = 1.0236 - ISE = 130.93 fA NR = 0.93013 - ISC = 6.1852 fA IRB = 0.01 mA RC = 0.56 /G01 MJE = 0.41827 - VTF = 0.22023 V CJC = 183.69 fF XCJC = 0.08334 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) /G01 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = -n H CBE = 68 fF CCB = 46 fF CCE = 232 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS mW Ptot TS TA Permissible Pulse Load RthJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB) f = 1MHz 0 2 4 6 8 V 12 VCB 0.0 0.1 0.2 0.3 pF 0.5 Ccb 0 2 4 6 8 V 12 VCB 0.0 0.1 0.2 0.3 pF 0.5 Ccb Transition frequency fT = f (IC) VCE = Parameter IC GHz fT 10V 0.7V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter IC dB G 10V 0.7V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter IC dB G 10V 0.7V

Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50/G02 ) VCE = Parameter, f = 900MHz IC -18 -16 -14 -12 -10 dBm IP3 8V 5V Power Gain Gma, Gms = f(VCE):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=1mA Power Gain |S21|2= f(f) VCE = Parameter f dB G 10V 0.7V IC=1mA Power Gain Gma, Gms = f(f) VCE = Parameter f dB G 10V 0.7V IC=1mA