BFP136

BFP136W INFINEON | Alldatasheet

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/G01 For power amplifier in DECT and PCN systems /G01 fT = 5.5GHz /G01 Gold metalization for high reliability VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP136W PAs 1 = E 2 = C 3 = E 4 = B SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 150 mA Base current IB 20 Total power dissipation TS /G01 60°C 1) Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 90 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values UnitSymbol min. max.typ. DC characteristics VV(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 12 -- µACollector-emitter cutoff current VCE = 20 V, VBE = 0 - 100-ICES Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 1.7 2.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.7 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 6.8 - Noise figure IC = 30 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 3.3 dB Power gain, maximum available 1) IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 15.5 9.5 Transducer gain IC = 80 mA, VCE = 5 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 Third order intercept point I C = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz IP3 - 33 - dBm

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BF = 113.32 - IKF = 1.4907 A BR = -86.717 IKR = 0.033605 A RB = 0 /G01 RE = 0.22081 /G01 VJE = 0.71518 V XTF = 0.31338 - PTF = 0 deg MJC = 0.31461 - CJS = 0f F XTB = 0- FC = 0.99886 - IS = 1.5813 fA VAF = 12.331 V NE = 1.4254 - VAR = V31.901 NC = 1.8821 - RBM = /G011.0078 CJE = 33.904 fF TF = ps20.691 ITF = 4.5579 mA VJC = 1.1381 V TR = ns1.0033 MJS = 0- XTI = 3 - NF = 1.0653 - ISE = 46.37 fA NR = 1.8047 - ISC = 0.0080864 fA IRB = 0.83992 mA RC = 0.01636 /G01 MJE = 0.36824 - VTF = 0.10174 V CJC = 2977.4 fF XCJC = 0.02899 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.5 nH LBO = 0.51 nH LEI = 0.18 nH LEO = 0.14 nH LCI = 0.05 nH LCO = 0.35 nH C BE = 78 fF C CB = 48 fF C CE = 244 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 2 4 6 8 V 11 VCB 0.0 0.5 1.0 1.5 2.0 pF 3.0 C cb Transition frequency fT = f (IC) V CE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 GHz 7.0 fT 8V 5V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 20 40 60 80 100 120 mA 160 IC dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 0.9GHz 1.8GHz IC =80mA Power Gain |S21|2= f(f) V CE = Parameter f dB G 10V 0.7V IC =80mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =80mA