BFN17 INFINEON | Alldatasheet
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BFN17, BFN19 Nov-30-20011 PNP Silicon High-Voltage Transistors /G01 Suitable for video output stages in TV sets and switching power supplies /G01 High breakdown voltage /G01 Low collector-emitter saturation voltage /G01 Complementary types: BFN16, BFN18 (NPN) VPS05162 Type Marking Pin Configuration Package BFN17 BFN19 DG DH 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN17 BFN19 Unit Collector-emitter voltage VCEO 250 300 V Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 mA 500ICMPeak collector current Base current IB 100 IBM 200Peak base current WPtotTotal power dissipation, TS = 130 °C 1 Junction temperature 150 °CTj Tstg -65 ... 150Storage temperature Thermal Resistance Junction - soldering point1) RthJS /G01 20 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BFN17, BFN19 Nov-30-20012 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN17 BFN19 V(BR)CEO 250 300 V Collector-base breakdown voltage IC = 100 µA, IE = 0 BFN17 BFN19 V(BR)CBO 250 300 Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 BFN17 BFN19 ICBO 100 100 nA Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C BFN17 BFN19 ICBO µA Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V BFN17 BFN19 hFE Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN17 BFN19 VCEsat 0.4 0.5 V Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 1) Pulse test: t < 300/G01 s; D < 2%
BFN17, BFN19 Nov-30-20013 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter ValuesSymbol Unit typ. max.min. AC Characteristics MHz-Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT 100- pFCollector-base capacitance VCB = 30 V, f = 1 MHz - 2.5Ccb -
BFN17, BFN19 Nov-30-20014 Operating range IC = f (VCEO) TA = 25°C, D = 0 EHP00587BFN 17/19 10 V CEO mA C 10-1 10 10 100 Ι V 102 01 2 3 555 100 100 DC µ µ ms ms s s Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0.2 0.4 0.6 0.8 W 1.2 Ptot Collector current IC = f (VBE) VCE = 10V EHP00589BFN 17/19 0 V BE 1.5 mA C 10-1 0.5 1.0 100 Ι V 102 Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00588BFN 17/19 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt
BFN17, BFN19 Nov-30-20015 Transition frequency fT = f (IC) VCE = 10V EHP00590BFN 17/19 10 10 mA f C MHz T 555 Ι 012 3 101 Collector cutoff current ICBO = f (TA) VCB = 200V EHP00591BFN 17/19 0 ˚C A 150 nA CBO 10-1 50 100 102 100 Ι T max typ 103 DC current gain hFE = f (IC) VCE = 10V EHP00592BFN 17/19 10 mA h C FE 100 10 10 10-1 0 1 2 3 Ι 102 555