BFL4037-1E

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Document overview

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Technical content

Features

• ON-resistance R DS(on)=0.33Ω (typ.) • Input capacitance Ciss=1200pF (typ.)
• 10V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 16 A IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 11 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation P D 2.0 W Tc=25°C (Our ideal heat dissipation condition)*3 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 142 mJ Avalanche Current *5 I AV 16 A Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V , L=1mH, IAV=16A (Fig.1) *5 L≤1mH, single pulse Package Dimensions unit : mm (typ) 7528-001 Ordering & Package Information Device Package Shipping memo BFL4037-1E TO-220F-3FS SC-67 pcs./tube Pb-Free Marking Electrical Connection 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 FL4037 LOT No. 1 BFL4037-1E Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No. A1831-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate to Source Leakage Current I GSS VGS=±24V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=8A 4.5 9 S Static Drain to Source On-State Resistance RDS(on) I D=8A, VGS=10V 0.33 0.43 Ω Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF Output Capacitance Coss 250 pF Reverse Transfer Capacitance Crss 55 pF Turn-ON Delay Time td(on) See Fig.2 26.5 ns Rise Time tr 78 ns Turn-OFF Delay Time td(off) 146 ns Fall Time tf 57 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=16A 48.6 nC Gate to Source Charge Qgs 8.2 nC Gate to Drain “Miller” Charge Qgd 27.4 nC Diode Forward Voltage VSD IS=16A, VGS=0V 0.95 1.3 V Reverse Recovery Time trr See Fig.3 IS=16A, VGS=0V, di/dt=100A/μs 600 ns Reverse Recovery Charge Qrr 5000 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit 50Ω10V ≥50Ω RG VDD L BFL4037 G S D PW=10μs D.C.≤1% P. G 50Ω G S D ID=8A RL=24.7Ω VDD=200V VOUT BFL4037 VIN 10V VIN VDD=50V BFL4037 500μH Driver MOSFET G S D

No. A1831-3/6 Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT11732 IT11733 IT11734 IT11735 IT11737IT11736 IT11738 IT11739 Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate to Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID 10 3052 5 15 20 15V 10V VGS=5V Tc=25°C 02 0 181641 221 0 68 1 4 VDS=20V Tc= --25°C 25°C 75°C 1.2 1.0 0.6 0.8 151359 71 1 0.4 0.2 ID=8A Tc=75°C 25°C --25°C --50 --25 0 25 50 75 100 125 150 1.0 0.4 0.8 0.6 0.2 0.9 0.3 0.7 0.5 0.1 ID=8A, V GS =10V 0.1 23 5 7 23 1.0 23 5 5 7 10 1.0 VDS=10V Tc= --25 75°C 25°C 0.01 0.1 1.0 --25 Tc=75 VGS=0V 100 1000 0.1 1.0 23 5 7 23 5 10 23 577 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 10000 5052 5 3 5 4 5 1510 30 40 20 f=1MHz Ciss Coss Crss

No. A1831-4/6 Operation in this area is limited by RDS(on). 10μs100 μs 1ms 10ms IDP=60A (PW≤10μs) DC operation 100ms IDc(*1)=16A IDpack(*2)=11A IT17060IT11740 IT11742IT11730 20 40 1.0 0.5 2.0 1.5 80 100 120 2.5 140 160 Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V Drain to Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C 5040 10 20 30 VDS=200V ID=16A 0.1 1.0 100 0.01 23 5 7 23 5 7 23 5 71.0 10 100 Tc=25°C Single pulse 20 40 80 100 120 140 160 *1. Shows chip capability *2. Our ideal heat dissipation condition

No. A1831-5/6 Outline Drawing BFL4037-1E Mass (g) Unit 1.8 * For reference mm

PS No. A1831-6/6 Note on usage : Since the BFL4037 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.