BFL4026-1E

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Document overview

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Technical content

Features

• ON-resistance R DS(on)=2.8Ω (typ.) • Input capacitance Ciss=650pF (typ.)
• 10V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 900 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 5A IDpack*2 Tc=25 °C (Our ideal heat dissipation condition)*3 3.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 10 A Allowable Power Dissipation P D 2.0 W Tc=25°C (Our ideal heat dissipation condition)*3 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 132 mJ Avalanche Current *5 I AV 5A Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V , L=10mH, IAV=5A (Fig.1) *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001 Product & Package Information
• Package : TO-220F-3FS
• JEITA, JEDEC : SC-67
• Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 FL4026 LOT No. BFL4026-1E

No. A1797-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 900 V Zero-Gate Voltage Drain Current I DSS V DS=720V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.0 4.0 V Forward Transfer Admittance | yfs | VDS=20V, ID=2.5A 1.4 2.8 S Static Drain-to-Source On-State Resistance RDS(on) I D=2.5A, VGS=10V 2.8 3.6 Ω Input Capacitance Ciss VDS=30V, f=1MHz 650 pF Output Capacitance Coss 100 pF Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time td(on) See Fig.2 14 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 117 ns Fall Time tf 39 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=5A 33 nC Gate-to-Source Charge Qgs 5.3 nC Gate-to-Drain “Miller” Charge Qgd 16.5 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.85 1.2 V Reverse Recovery Time trr See Fig.3 IS=5A, VGS=0V, di/dt=100A/μs 720 ns Reverse Recovery Charge Qrr 4700 nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device Package Shipping memo BFL4026-1E TO-220F-3FS 50pcs./magazine Pb Free 50Ω ≥50Ω RG VDD L 10V BFL4026 G S D P. G RGS=50Ω G S D ID=2.5A RL=80Ω VDD=200V VOUT BFL4026 VIN PW=10μs D.C.≤0.5% 10V VIN VDD=50V BFL4026 500μH Driver MOSFET G S D

No. A1797-3/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT15761 IT15762 IT15763 IT15764 --50 --25 0 25 50 75 100 125 150 10 5053 5 25 4520 30 4015 01 2 421 0 68 15V 10V Tc=25°C VDS=20V VGS=4V IT15766 0.01 0.1 1.0 IT15765 --25 Tc=75 0.01 0.123 5 7 23 5 7 7 1.0 10 23 5 1.0 0.1 VDS=20V Tc= --25 75°C VGS=0V Single pulse Tc= --25°C 25°C 75°C 234 1512861 051 4 13971 1 ID=2.5A Single pulse Tc=75°C 25°C --25°C VGS =10V , I D=2.5A 25°C Single pulse IT15767 100 0.1 1.0 10 23 5 7 23 5 7 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 501053 0 4 0 2015 35 45 25 IT15768 f=1MHz Ciss Coss Crss

No. A1797-4/7 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C IT10478 IT15771 IT15772 20 40 60 80 100 120 2.5 140 160 PD -- Ta Allowable Power Dissipation, PD -- W2.0 1.5 1.0 0.5 20 40 60 80 100 140 120 160 PD -- Tc A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT15770IT15769 15 301052 0 3 5 25 VDS=200V ID=5A 0.01 0.1 1.0 0.1 10μs 100ms10ms 1ms DC operation 1.0 10 100 100023 5 7 23 5 7 7 23 5 2 2 35 7 Operation in this area is limited by RDS(on). IDP=10A (PW≤10μs) IDc(*1)=5A IDpack(*2)=3.5A 100 μs *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C Single pulse

No. A1797-5/7 Magazine Specifi cation BFL4026-1E

No. A1797-6/7 Outline Drawing BFL4026-1E Mass (g) Unit 1.8 * For reference mm

PS No. A1797-7/7 Note on usage : Since the BFL4026 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.