BFG92A NXP | Alldatasheet
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Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X FEA TURES
- High power gain
- Low noise figure
- Gold metallization ensures excellent reliability. APPLICA TIONS Wideband applications in the UHF and microwave range.
DESCRIPTION
Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143B. Marking code: %MW. handbook, 2 columns Top view MSB014 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage −− 20 V VCEO collector-emitter voltage −− 15 V IC collector current (DC) −− 25 mA Ptot total power dissipation Ts ≤ 60 °C −− 400 mW C re feedback capacitance I C =ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency I C = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 16 − dB IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 2 GHz − 11 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 2 − dB Rev. 06 - 12 March 2008 2 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5 °C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 25 mA Ptot total power dissipation Ts ≤ 60 °C; note1 − 400 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering pointnote1 290 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP . MAX. UNIT ICBO collector leakage current IE = 0; VCB =1 0V −− 50 nA hFE DC current gain IC = 15 mA; VCE = 10 V 65 90 135 C c collector capacitance IE =ie = 0; VCB = 10 V; f= 1 MHz − 0.6 − pF C e emitter capacitance IC =ic = 0; VEB = 10 V; f= 1 MHz − 0.9 − pF C re feedback capacitance IC =ic = 0; VCB = 10 V; f= 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f= 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain; note1 IC = 15 mA; VCE =1 0V ; Tamb =2 5 °C; f= 1 GHz − 16 − dB IC = 15 mA; VCE =1 0V ; Tamb =2 5 °C; f= 2 GHz − 11 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5 °C; f= 1 GHz − 2 − dB Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5 °C; f= 2 GHz − 3 − dB G UM 10 S 21 1S 11 2–() 1S 22 3 of 13 Rev. 06 - 12 March 2008 3 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 800 600 200 400 MBB963 - 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current; typical values. VCE =1 0V . handbook, halfpage 01 0 2 0 3 0 120 MCD074 hFE I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC =ic = 0; f = 1 MHz. handbook, halfpage 0.6 0.4 0.2 62 4 MCD075 C re (pF) V (V)CB Fig.5 Transition frequency as a function of collector current; typical values. VCE = 10 V; Tamb =2 5°C; f = 500 MHz. handbook, halfpage 01 0 2 0 3 0 MBB275 I (mA)C fT (GHz) 4 of 13 Rev. 06 - 12 March 2008 4 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X Fig.6 Gain as a function of collector current; typical values. VCE = 10 V; f = 500 MHz. handbook, halfpage MCD077 51 0 15 20 gain (dB) I (mA)C MSG G UM Fig.7 Gain as a function of collector current; typical values. VCE = 10 V; f = 1 GHz. handbook, halfpage MCD078 51 0 1 5 2 0 gain (dB) I (mA)C MSG G UM Fig.8 Gain as a function of frequency; typical values. VCE = 10 V; IC = 5 mA. handbook, halfpage50 MCD079 102 103 104 gain (dB) f (MHz) MSG G UM G max Fig.9 Gain as a function of frequency; typical values. VCE = 10 V; IC =1 5m A . handbook, halfpage50 MCD080 102 103 104 gain (dB) f (MHz) MSG G UM G max 5 of 13 Rev. 06 - 12 March 2008 5 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =1 0V . handbook, halfpage4 MCD081 101 F (dB) I (mA)C f = 2 GHz
1 GHz
500 MHz
Fig.11 Minimum noise figure as a function of frequency; typical values. VCE =1 0V . handbook, halfpage4 MCD082 F (dB) f (MHz) 10 410 310 2 I = 15 mAC 5 mA 10 mA Fig.12 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 j – j MCD083 23.9 dB unstable region stability circle MSG 25 1 00.50.2 1 2 dB 3 dB 4 dB OPT F = 1.6 dBmin Zo =5 0Ω . Maximum stable gain = 23.9 dB. 6 of 13 Rev. 06 - 12 March 2008 6 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X Zo =5 0Ω . Maximum stable gain = 19.9 dB. Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD084 19.9 dB unstable region stability circle MSG 10.2 25 1 00.5 OPT F = 2.1 dBmin 2.5 dB 3 dB 4 dB Zo =5 0Ω . Fig.14 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD085 10.2 51 00.5 2 G max 12 dB 12.5 dB 10 dB F = 3 dBmin OPT 5 dB 4 dB 3.5 dB 7 of 13 Rev. 06 - 12 March 2008 7 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X VCE = 10 V; IC =1 5m A . Fig.15 Common emitter input reflection coefficient (S11); typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 j – j MCD086 0.5 10.2 10 52
3 GHz
40 MHz
Fig.16 Common emitter forward transmission coefficient (S21); typical values. VCE = 10 V; IC =1 5m A . handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD072 1020304050 Rev. 06 - 12 March 2008 8 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X Fig.17 Common emitter reverse transmission coefficient (S12); typical values. handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD071 VCE = 10 V; IC =1 5m A . VCE = 10 V; IC =1 5m A . Fig.18 Common emitter output reflection coefficient (S22); typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD073 0.5 10.2 10 52 Rev. 06 - 12 March 2008 9 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X SPICE parameters for BFR90A/X die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 411.8 aA 2 BF 102.6 − 3 NF 997.2 m 4 VAF 62.67 V 5 IKF 3.200 A 6 ISE 4.010 fA 7 NE 1.577 − 8 BR 18.10 − 9 NR 996.2 m 10 VAR 3.369 V 11 IKR 1.281 A 12 ISC 279.9 aA 13 NC 1.075 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 1.164 Ω 18 RC 2.320 Ω 19 (note1) XTB 0.000 − 20 (note1) EG 1.110 eV 21 (note1) XTI 3.000 − 22 CJE 890.5 fF 23 VJE 600.0 mV 24 MJE 258.5 m 25 TF 15.49 ps 26 XTF 39.14 − 27 VTF 2.152 V 28 ITF 213.7 mA 29 PTF 0.000 deg 30 CJC 546.5 fF 31 VJC 380.8 mV 32 MJC 202.9 m 33 XCJC 150.0 m 34 TR 5.618 ns 35 (note1) CJS 0.000 F Note 1. These parameters have not been extracted, thedefault values are shown. List of components(see Fig.19) 36 (note1) VJS 750.0 mV 37 (note1) MJS 0.000 − 38 FC 850.0 m DESIGNA TION VALUE UNIT C be 84 fF C cb 17 fF C ce 191 fF L1 0.12 nH L2 0.21 nH L3 0.06 nH LB 0.95 nH LE 0.40 nH SEQUENCE No. PARAMETER VALUE UNIT Fig.19 Package equivalent circuit SOT143B. QL B = 50; QLE = 50. QL B,E (f)= QL B,E √ (f/fc). fc = scaling frequency= 100 MHz. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ceC 10 of 13 Rev. 06 - 12 March 2008 10 of 13
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp 11 of 13 Rev. 06 - 12 March 2008 11 of 13
NXP Semiconductors BFG92A/X NPN 5 GHz wideband transistor Legal information Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Rev. 06 - 12 March 2008 12 of 13
NXP Semiconductors BFG92A/X NPN 5 GHz wideband transistor © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 March 2008 Document identifier: BFG92AX_N_6 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
Revision history
Document ID Release date Data sheet status Change notice Supersedes BFG92AX_N_6 20080312 Product data sheet - BFG92AX_N_5 Modifications: • Characteristics Table; DC current gain value changed BFG92AX_N_5 20071126 Product data sheet - BFG92AX_4 BFG92AX_4 (9397 750 04344)
19980923 Product specification - BFG92SERIES_3
BFG92SERIES_3 19950912 Product specification - BFG92SERIES_2 BFG92SERIES_2 19921101 Product specification - BFG92_SERIES_1 BFG92_SERIES_1 - - - -