BFG91

BFG91 PHILIPS | Alldatasheet

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Philips Semiconductors @® 6653931 0031233 T15 MBAPX Product specification —E EE . . | NPN 6 GHz wideband transistor S BFG91A N AMER PHILIPS/DISCRETE BIE D DESCRIPTION PINNING NPN transistor in a 4-lead [PIN | DESCRIPTION | 1 dual-emitter plastic SOT103 omitier envelope. It is designed for application ir collector in wideband amplifiers, such as MATV omiter 4 2 and CATV systems. base Bottom view ‘Ms8037 | Fig.1 SOT103. | QUICK REFERENCE DATA ——— [sywwoe | panaweven | __cowomons [wna [TP [wax] Un [Vero | eoteiorbasevotege lopeneniver SS S-id-dts v _ [Vero leotectoremiterwotage —fopenbase————SSSS—~d id id SO [Pa [total power dissipation [upto T, = 168°C (rote 1) [= |= [00 [mw | [ie _[0Cemen'gan dig SOmAVeg= Vit =a [0 fo [|_| transition frequency Te = 30 MA; Vee = 5 V; f= 500 MHz, T,=25°C [6 |Teeabeck capacitance fio=O.VoeaSVit=tmne —_|- [05 _|- [oF _| Guy maximum unilateral power gain I, = 30 MA; Voge = 8 V; f= 800 MHz; 17.5 Tow = 25°C noise figure le = 30 MA; Vog = 8 V; Zs = Opt; f= 800 MHZ; Tans = 25 °C ‘output power at 1 dB gain Ig = 80 MA; Veg = BV; R, = 75.0; 17 compression f= 800 MHZ; Tarp = 25 °C TO third order intercept point Ig = 90 MA; Veg = BV; R, = 75.0; f= 800 MHZ; Tan» = 25 °C Note 1. T, is the temperature at the soldering point of the collector lead. November 1992 279 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors gy 453931 0031234 951 MMAPX Product specification NPN 6 GHz wideband transistor BFG91A N AMER PHILIPS/DISCRETE 69E D LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). [eno [eolaciorbasevotage ——openemiter [= ftv [Vaso _|olectoremiiervottage ——sfopenbase = ftv [Veo _[emiterbasevollage [opencofector =f [ic [DCeatiectoreurent P85 frm [low [peak colactorcurent [te tMz f= ff ma_ [Pu total power dissipation up toT, = 158°C (note 1) [= [s00_[mw_| [Ta [storage temperate fests fF [T___[unetion temperature Ts fc THERMAL RESISTANCE Rais thermal resistance from junction to up to T, = 158 °C (note 1) 55 KW soldering point Note 1. T, is the temperature at the soldering point of the collector lead. November 1992 280 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors @® 6653931 0031235 898 MBAPX Product specification NPN 6 GHz wideband transistor BFG91A N AMER PHILIPS/DISCRETE BIE D CHARACTERISTICS T, = 25°C unless otherwise specified. collector cut-off current e=0; Veg=5V [- [= [50 [na | [hrs [DC curent gan ign 80 mAi Vog=5V a collector capacitance Ie=l,=0;Veg=10Vif=1MHz [- [og |- [pr | emitter capacitance lo=ic=O;Vep=O5Vit=1MHz [-— [25 [= [pF | feedback capacitance Io= 0; Vee = 5 Vif = 1 MHz [- fos [- [pF | transition frequency le=30MA;Voe=SV;f=500MHz |- [6 |- [GHz | ‘maximum unilateral power gain lo = 30 MA; Vog = 8 V; f= 800 MHz; 175 (note 1) Tan = 25°C Ig = 30 MA; Vog = 8 V; f= 2 GHz; Tan = 25°C F noise figure lg = 4 MA; Vee = 8 V; Zy = Opt; 1 = 800 MHZ; Tan = 25 °C lo = 30 MA; Vee = B V; Zg = Opt; f = 800 MHZ; Tune = 25 °C ‘output power at 1 dB gain Vor = 8 V; Ig = 30 mA; R, = 75; 7 compression f= 800 MHZ; Tare = 25 °C. TO third order intercept point (see Fig. 2) output voltage [rote fas [Tv a second order intermodulation note 4 50 distortion (see Fig.2) Notes 1. Gyy is the maximum unilateral power gain, assuming S,»is zero and Gyy = 10 log —— St” _ yg, 2. 1o= 30 MA; Vog = BV; Ry = 75.9%; Tay = 25 °C; P, = ITO —6 dB; f, = 800 MHz; P, = ITO - 6 dB; {, = 801 MHz; measured at flag») = 802 MHz and at fia.) = 799 MHz. 8. Gyy = -60 AB; Ie = 30 MA; Veg = 8 V; Ry = 75 2; Tarp = 25 °C; V, = Vo at dj, = ~60 dB; f, = 795.25 MHz; Va = Vo ~8 dB; f, = 803.25 MHz; V, = Vo -6 dB; f, = 805.25 MHz; measured at fip.q.» = 793.25 MHz. 4. Ig = 30 MA; Voe = 8 V; R, = 75 2; VSWR < 2; Tarp = 25 °C; V, = Vo = 200 mV at f, = 250 MHz; Vq= Vo = 200 mV at f, = 560 MHz; measured at {ip.q) = 810 MHz. November 1992 281 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors ggg 453931 OO3L236 724 MMBAPX___Prodvet specioaion NPN 6 GHz wideband transistor BFG91A N AMER PHILIPS/DISCRETE bE D 1.5nF ‘er vi st, +Ves Zz bod 7 tho 2 une dl see u | 2702 -o 760 ink 752 of DUT L1 = L3 = 5 pH Ferroxcube choke. L2 = 3 tums 0.4 mm copper wire, intemal diameter 3 mm, winding pitch 1 mm. | Fig.2. intermodulation distortion and second order intermodulation distortion MATV test circuit. “TULLE | a Prot a we CLE LLAL ie | ee ot | EE EA a a Feces |) EEE wo tL TI “er Ferree) |) GSES LETT ty soto oO 50 100 150. 0 200 oO 10 20 30 T, (°C) Ig (mA) Vo = 8 VT, = 25°C. Fig.3 Power derating curve. Fig.4 DC current gain as a function of collector current. November 1992 282 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors MM 6653931 0031237 bbO MAPX Product specification NPN 6 GHz wideband transistor BFG91A N AMER PHILIPS/DISCRETE bIE D- “Tere A a uM

6 CSREES oh

EERE |) Cobeecc BEER |) GAH a i JAT TTT TT K++ +} (PP a ott Et Tt ty Vog Ig (ma) le=1,=0;f = 1 MHz; T,= 25 °C. Vog = 8 V; f= 500 MHz; T, = 25 °C. Fig.5 Collector capacitance as a function of Fig.6 Transition frequency as a function of collector-base voltage. collector current. ° Mm a ou | @ eet PST ETT ce LON UTE TTT) ee NG 50 IN 55 N ot TING ll NE eS LTE El CoE EP oL_L LTTE TTT a 10 a ° " 2 © i cimay? Vee = 8 V; Vo = 425 MV; fing = 793.25 MHz; lg = 30 MA; Vog = 8 V; Tanb = 25 °C. Temp = 25 °C. Fig.7 Maximum unilateral power gain as a Fig.8 Intermodulation distortion as a function of function of frequency. collector current. November 1992 283 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors MM 6653931 0032238 ST? MM APX Product specification NPN 6 GHz wideband transistor BFG91A a || AMER PHILIPS/DISCRETE boE D “CT ‘TO el a @ SUIT COCR EEET ami a ee CTP soe TT TEEPE ETE FT wef TAP TT | zal ttt At eer Cl LCN : Cee eT | oe os LETT fy 10 20 30 Hgimay*® 4 10 Ig (ma) 100 Vog = 8 V; Vo = 200 UBM; fip.g = 810 MHZ; Tarp = 25 °C. Vee = 8 V; Zs = OPt.; Tans = 25 °C. Fig.9 Second order intermodulation distortion Fig.10 Minimum noise figure as a function of as a function of collector current. collector current, ; vom . vas sn Pe ZT "ESA EE) AON SAIN AA oe Ne Ses] ae_le=tee a0) ll NZve om eel TTT n MweZe//88 em IE TT as=2 258 ae a tL T ETT | Vog = 8 V; Z5 = Ot; Tarw = 25 °C. Vee = 8 V; le = 4 mA; f = 800 MHZ; Tapp = 25 °C. frequency. ) November 1992 284 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors MM 6653931 0032239 433 MBAPX Product specification NPN 6 GHz wideband transistor BFG91A TT ON AMER PHILIPS/DISCRETE BIE D so Nin IV ZRaN Hexen IRE ao WET at NEE ° 20 49 Ggims) © Veg = 8 V; I = 30 mA; f = 800 MHZ; Tyre = 25 °C. Fig.13 Noise circle figure. November 1992 285 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors @™ 6653931 0031240 155 MBAPX Product specification NPN 6 GHz wideband transistor BFG91A N AMER PHILIPS/DISCRETE BSE D a 05, Va Sz KASS YY, eN ASE SOE QO’ . 1g = 30 MA; Veg = B Vi Tanp = 25 °C. 1 Fig.14 Common emitter input reflection coefficient (S,,). Va Samm [ES<elieK SX \\ fERSB\\ \\ etl] OEE TY QE” eS? lg = 30 MA; Veg = 8 V; Tyne = 25 °C. aeces Fig.15 Common emitter forward transmission coefficient (S.,). November 1992 286 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors M@ 6653931 0031241 091 BMAPX Product specification NPN 6 GHz wideband transistor BFG91A ~~ N AMER PHILIPS/DISCRETE BIE D ee ee San TEES Hae SAN Wi VOCE PLY SE ae Ig = 30 MA; Veg = 8 V; Tamm = 25 °C. 90° acm Fig.16 Common emitter reverse transmission coefficient (S,,). > aa 6 yz KAS ° 02 os 1 SSS | + wil 3 AGEY Xx lg = 30 MA; Veg = 8 V; Tams = 25°C. 1 weet Fig.17 Common emitter output reflection coefficient (S22). November 1992 287 Capability approved CECC 50 000 (issue 4), 1986

Table 1. Common emitter scattering parameters, Io = 10 MA; Voz = 8 V