BFG67 NXP | Alldatasheet
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Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR FEA TURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability. APPLICA TIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. MARKING TYPE NUMBER CODE BFG67 (Fig.1) V3% BFG67/X (Fig.1) %MV BFG67/XR (Fig.2) V26 PINNING PIN 1 collector collector collector 2 base emitter emitter 3 emitter base base 4 emitter emitter emitter Fig.1 Simplified outline SOT143B. handbook, 2 columns Top view MSB014 Fig.2 Simplified outline SOT143R. handbook, 2 columns Top view MSB035 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base − 10 V IC collector current (DC) − 50 mA Ptot total power dissipation Ts ≤ 65 °C − 300 mW C re feedback capacitance I C =ic = 0; VCB = 8 V; f = 1 MHz 0.5 − pF fT transition frequency I C = 15 mA; VCE = 8 V; f = 500 MHz 8 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz 17 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz 1.3 − dB Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz 2.2 − dB Rev. 05 - 23 November 2007 2 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation Ts ≤ 65 °C; seeFig.3; note1 − 380 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MBC984 - 1 150 Ptot (mW) Ts (o C) THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 290 K/W Rev. 05 - 23 November 2007 3 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR CHARACTERISTICS Tj = 25°C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. TYP . MAX. UNIT ICBO collector leakage currentVCB =5V ; IE =0 −− 50 nA hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − fT transition frequency IC = 15 mA; VCE = 8 V; f= 500 MHz − 8 − GHz C c collector capacitance IE =ie = 0; VCB = 8 V; f= 1 MHz − 0.7 − pF C e emitter capacitance IC =ic = 0; VEB = 0.5V; f= 1 MHz − 1.3 − pF C re feedback capacitance IC =ic = 0; VCB = 8 V; f= 1 MHz − 0.5 − pF G UM maximum unilateral power gain; note1 IC = 15 mA; VCE =8V ; Tamb =2 5 °C; f= 1 GHz − 17 − dB IC = 15 mA; VCE =8V ; Tamb =2 5 °C; f= 2 GHz − 10 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =8V Tamb =2 5 °C; f= 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE =8V ; Tamb =2 5 °C; f= 1 GHz − 1.7 − dB IC = 5 mA; VCE =8V ; Tamb = 25 °C; f= 2 GHz; ZS =6 0 Ω − 2.5 − dB IC = 15 mA; VCE =8V ; Tamb =25 °C; f= 2GHz; ZS =6 0 Ω − 3 − dB G UM 10 S 21 1S 11 2–() 1S 22 Rev. 05 - 23 November 2007 4 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.4 DC current gain as a function of collector current. VCE =5V . handbook, halfpage 120 20 40 MBB301 60I (mA)C FEh Fig.5 Feedback capacitance as a function of collector-base voltage. IC =ic = 0; f = 1 MHz. handbook, halfpage 0.8 0.6 0.4 0.2 MBB302 81 2 1 6 C re (pF) VCB (V) Fig.6 Transition frequency as a function of collector current. VCE = 8 V; Tamb =2 5°; f = 2 GHz. handbook, halfpage 01 0 2 0 4 0 MBB303 I (mA)C (GHz) Tf Fig.7 Gain as a function of collector current. VCE = 8 V; f = 1 GHz. G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage gain (dB) IC (mA)0 10 20 40 MBB304 MSG G UM maxG Rev. 05 - 23 November 2007 5 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.8 Gain as a function of frequency. VCE = 8 V; IC = 5 mA. G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage50 MBB305 102 103 104 gain (dB) f (MHz) G UM MSG G max Fig.9 Gain as a function of frequency. VCE = 8 V; IC =1 5m A . G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage50 MBB306 102 103 104 gain (dB) f (MHz) G UM MSG G max Fig.10 Gain as a function of frequency. VCE = 8 V; IC = 30 mA. G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage50 MBB307 102 103 104 gain (dB) f (MHz) G UM MSG G max Fig.11 Minimum noise figure as a function of collector current. VCE =8V . handbook, halfpage4 100 MBB308 101 F (dB) I (mA)C f = 2 GHz
1 GHz
900 MHz
500 MHz
Rev. 05 - 23 November 2007 6 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.12 Minimum noise figure as a function of frequency. VCE =8V . handbook, halfpage4 MBB309 F (dB) f (MHz) 10 410 310 2 5 mA I = 30 mAC 15 mA BFG67/X Noise Parameters f (MHz) VCE (V) IC (mA) 500 8 5 Fmin (dB) Gamma (opt) R n/50 (mag) (ang) 0.95 0.455 33.8 0.288 Fig.13 Noise circle figure. ZO =5 0Ω . 0.2 0.5 0.2 0.5 + j − j MBB317 stability circle unstable region Fmin=0.95 dB OPT 10.2 10 520.5 1.5 dB 2 dB 3 dB Rev. 05 - 23 November 2007 7 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR BFG67/X Noise Parameters f (MHz) VCE (V) IC (mA) 1000 8 5 Fmin (dB) Gamma (opt) R n/50 (mag) (ang) 1.3 0.375 65.9 0.304 Fig.14 Noise circle figure. ZO =5 0Ω . 0.2 0.5 0.2 0.5 + j − j MBB316 Fmin 2 dB stability circle unstable region =1.3 dB OPT 0.2 1 10520.5 3 dB 4 dB BFG67/X Noise Parameters Average Gain Parameters f (MHz) VCE (V) IC (mA) 2000 8 5 Fmin (dB) Gamma (opt) R n/50 (mag) (ang) 2.2 0.391 136.5 0.184 G MAX (dB) Gamma (max) (mag) (ang) 12 0.839 −170 Fig.15 Noise circle figure. ZO =5 0Ω . 0.2 0.5 0.2 0.5 + j – j MBB315 1015 20.2 0.5 3 dB 4 dB 5 dBOPT Fmin=2.2 dB G max 10 dB 9 dB 8 dB =12dB 11 dB Rev. 05 - 23 November 2007 8 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.16 Common emitter input reflection coefficient (S11). VCE = 8 V; IC = 15 mA; ZO =5 0 Ω . handbook, full pagewidth MBB314 0.2 0.5 0.2 0.5 + j − j
3 GHz
10.2 10520.5
40 MHz
handbook, full pagewidth MBB313 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 40 20 3 GHz Fig.17 Common emitter forward transmission coefficient (S21). VCE = 8 V; IC = mA; ZO =5 0 Ω . Rev. 05 - 23 November 2007 9 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Fig.18 Common emitter reverse transmission coefficient (S12). VCE = 8 V; IC = 15 mA. handbook, full pagewidthhandbook, full pagewidth MBB312 0.2 0.5 0.2 0.5 + j − j 10.2 10520.5 Fig.19 Common emitter output reflection coefficient (S22). handbook, full pagewidth MBB311 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° VCE = 8 V; IC = 15 mA. Rev. 05 - 23 November 2007 10 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp Rev. 05 - 23 November 2007 11 of 14
NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp Rev. 05 - 23 November 2007 12 of 14
NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Legal information Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Rev. 05 - 23 November 2007 13 of 14
NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2007 Document identifier: BFG67_X_XR_N_5 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
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