BFG65

BFG65 PHILIPS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Philips Semiconductors Product specification NPN 8 GHz wideband transistor S Braces oe N 0045082 oO4 MPHI PHILIPS INTERNATIONAL SbE D MM 711082eb DESCRIPTION PINNING ; NPN transistor in a four-lead dual [PIN | DESCRIPTION | emitter plastic envelope (SOT103). Siniter Itis designed for wideband application in the GHz range, such collector = as satellite TV systems and repeater emitter amplifiers in fibre-optical systems. base The device features a very high 3 transition frequency, high gain and a very low noise figure up to 2 GHz. Bottom view MSE0S7 Fig.1 SOT103, QUICK REFERENCE DATA collectorbase volage [openemitter [= [= [20 fv [ves | cotecto-ertervatage—opentase |=] 10 Jv] [le [DC cotlectorcurrent f= 50m [Pu | total powerdissipation —fuptoT,= 158°C (note1) [- [- [300 [mw [7 [junctiontemperature ft [Pee [DC currentgain lp= 15MA\\Vee=5V feo ftoo [= fr transition frequency lg= 15 mA; Veg = 8 Vi GHz f= 500 MHz Gm Taximum unilateral power |Ig= 15 MA; Vog = 8 Vs 105 gain t=2GHz noise figure atoptimum |Z,=500; l= 15 mA; 17 source impedance Vee = 8 Vit = 1 GHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). [-svweot | anaweren | cowovioné [ww [wax | wt] [Veao __[collector-base voltage openemitter = 20 [Vero | colector-emitter votage [openbase = ft [Veso __[emitter-base voltage open collector [= 25 VO [lc _—[DCcolectorcurent P50 ma [Pu ____| total power dissipation uptoT,= 158°C (note) [= [300 [mw [ray [storage tenperaurerenge [dfs [T,_Tiunction temperature Note 1. T,is the temperature at the soldering point of the collector lead. November 1992 239 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification 31-17 NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL SLE D MM 7210826 0045083 THO MMPHIN THERMAL RESISTANCE [__svweo. | _panaweven | YWERWALREDSTANCE | CHARACTERISTICS T, = 25 °C unless otherwise specified. [ svwoou | Parawever | conomions [wm | Te [wax | unr | [tee [DC eurentgain [lp 5 mAjVeg=5V [ao _[wo_[- | __| tr transition frequency Io = 15 MA; Veg = 8 V; f = 500 MHz C. collector capacitance | Ir =i, = 0; Vog=8 V; 14 f=1MHz c, ‘emitter capacitance Io =|, = 0; Veg = 0.5 V; f=1MHz Ce feedback capacitance | Ic = 0; Vcg = 8 V; pF f=1MHz Guu maximum unilateral Io = 15 MA; Voe = BV; power gain (note 1) Tam = 25 °C; f = 800 MHz Tc = 15 MA; Vee = BV; Tramp = 25 °C; f= 2 GHz noise figure at optimum |Z, = 50 0 Ic = 5 mA; Vog = 8 V; ‘source impedance Tomb = 25 °C; f= 1 GHz Z, = 50 Q; I= 15 MA; Voe= BV; 17 Tamw = 25 °C; f= 1 GHz Ze = 50 ; Ip = 5 MA; Veg = BV; Tum = 25 °C; f= 2 GHz Z, = 50 Q; Ig = 15 MA; Voz = BV; 27 Ton = 25 °C; f = 2 GHz Note A 4 . {SaP 1. Guy is the maximum unilateral power gain, assuming S,, is zero and Guy = 10109 Gs ay Gg gy OF November 1992 240 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification T-31-17 NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL SbE D MM 7110826 0045084 987 MPHIN 400 vue 120 a nee MBE) a TLL om eT ETT Ty re 4 a eo TPP ° eoLL t |_| | Seeeeenie rt “coe |) “ECT He—-+H EET JTLT Ty Ts (°C) ic Voe = 8 V; T= 25 °C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. “CEE “CMM LOM yee | CENT COO AN 6 7 NI SannnEn ol EET TTT HE 1 A CTE ETT TT Pee a a ot LUE Tl ° 10 20 30 gin) 40 10 107 10 (wie) 104 Voe = 8 V; f = 500 MHz. Vee = 8 V; Io = 15 MA; Tap = 25 °C. Fig.4 Transition frequency as a function of Fig.5 Maximum unilateral power gain as a collector current. function of frequency. November 1992 241 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification FF 7 . NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL 5 bE Dom — 7420626 0045085 613 mapyty ‘Con a : TW . mea oy TI VA TTT @ 7 TM ZT aAUIIZ2B 7 Orn fast CHO oe ern ahi Baath) AB aill ee TTT TTI en 0 | | ee a LUTE ET 1 2 pom = 10? 108 tame) 1° Vee = 8 V. Veg = BV. Fig.6 Minimum noise figure as a function of Fig.7 Minimum noise figure as a function of collector current. frequency. November 1992 242 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification J-31-17 NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL SBE D MM 7130826 0045086 757 mEPHIN a TSS, A oN T 2000 Mi. CN ° —— ARES er KN EH. aX Ly s QE ne TF 2 Ss ~ ‘MBBS31 Voe = 8 V; lo = 30 MA; Tarp = 25 °C. : Fig.8 Common emitter input reflection coefficient (S,,). wo? Jo ——— yo FSA ETL LL eer\\\\\\s cs hy | XS XA 2 me Ve = 8 V; Ie = 30 MA; Tarp = 25 °C. oo? mes Fig.9 Common emitter forward transmission coetticient (S>,)- November 1992 243 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG65 TTT BT -17 PHILIPS INTERNATIONAL SbE D M@ 7110826 0045087 &9b MEPHIN anes fox \\ TSE senescent <2 is IBY EEG Vee = 8 V5 Ie = 30 MA; Tynp = 25 °C. oe “ee Fig.10 Common emitter reverse transmission coefficient (S,,). a OCm~ tf THAIS ie Qaa7 i Vee = 8 V; Ie = 30 MA; Tyne = 25 °C. 1 oesse Fig.11 Common emitter output reflection coefficient (S,.). November 1992 244 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL SbE D MM 7120826 0045088 S22 MMPHIN Table 1 Common emitter scattering parameters, Vor = 8 V, lp = 10 mA 1-31-17 a jos [asta [elas esas fea (cB) (RAT) | (DEG) | (RAT) (RAT) (RAT) November 1992 245 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification T-31-17 NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL SbE D MM 7110826 0045089 469 MEPHIN Table 2 Common emitter scattering parameters, Ve = 8 V, Io = 15 mA es ras [a [os [a [a ae | (RAT) (RAT) (RAT) (RAT) (DEG) 40 | 0653 | -258 | 34244 | 1643 | 0.009 | 77.1 0050 | -132 | 432 too | 0.620 | -595 | 29.823 | 1451 | 0.020 | 636 | 0827 | -298 | 366 200 | 0863 | -100.4 | 21.965 | 1235 | 0.031 52.1 ois | 469 | 306 300 | 0541 | -125.7 | 16612 | 1105 | 0.036 | 466 | 0476 | -559 | 27.0 500 | 0534 | -1528 | 10854 | 952 | 0.045 | 458 | 0.040 | -648 | 227 600 | oss2 | -161.2 | 9223 | 899 | 0.048 | 466 | 0.906 | -669 | 212 zoo | 0527 | -1680 | 7978 | 955 | 0053 | 475 | 0284 | -683 | 198 soo | os22 | -1739 | 7.061 817 | 0057 | 489 | 0.265 | 693 | 187 goo | 0523 | -1793 | 6308 | 77.8 | 0.062 | 49.1 0.250 | -698 | 177 tooo | 0522 | 1759 | 5693 | 744 | 0.066 | 498 | 0236 | -704 | 167 1200 | 0532 | 1662 | 4809 | 678 | 0.074 | 498 | o211 -749 | 153 1400 | 0545 | 1583 | 4.141 619 | 0084 | 492 | 0195 | -833 | 14.0 1600 | 0550 | 1526 | 3629 | 562 | 0.093 | 492 | 0.200 | -89.1 129 1800 | 0550 | 1466 | 3.287 | 502 | 0.103 | 480 | 0208 | -931 124 2000 | oss | 1398 | 2987 | 451 | 0113 | 462 | 0205 | -95.9 | 113 2200 | 0575 | 1338 | 2710 | 398 | 0123 | 45.0 | 0.191 | -t01.4 | 106 2400 | 0597 | 1284 | 2515 | 355 | 0.131 435 | 0.185 | -112.1 10.1 2600 | 0615 | 125.1 | 2326 | 304 | o140 | 41.9 | 0.199 | -1225 9.6 2800 | 0620 | 1196 | 2197 | 243 | 0148 | 390 | 0218 | -1288 92 3000 | 0.624 1146 | 2060 | 203 | 0159 | 373 | 0.225 | -190.9 86 November 1992 246 Capability approved CECC 50 000 (issue 4), 1986

Philips Semiconductors Product specification T-31-17 NPN 8 GHz wideband transistor BFG65 PHILIPS Tears s_s_ lll INTERNATIONAL SbE D MM@ 7110826 0045090 180 MEPHIN Table 3 Common emitter scattering parameters, Voz = 8 V, I = 20 mA a 2S | ae |e [a [os [Se | (RAT) (RAT) (RAT) | (DEG) | (RAT) November 1992 247 Capability approved CECC 50 000 (issue 4), 1986