BFG540 SKTECHNOLGY | Alldatasheet
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High gain:︱S e TYP . Value is 13dB Low noise: NF TYP. Value is 1.8dB f T (TYP.) TYP. Value is 9GHz TYPE PACKAGE BFG540 SOT -143B BFG540-X SOT -143B BFG540-XR SOT -143R Absolute Maximum Ratings T A =25 PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature hFE Classification Classification A TYPE BFG540 BFG540-X BFG540-XR hFE 60~100 TYP . Value is 13dB @ V CE =8V，I C =40mA，f=0.9GHz TYP. Value is 1.8dB @ V CE =10V，I C =10mA，f=0.9GHz TYP. Value is 9GHz @ V CE =8V，I C =40mA，f=1GHz MARKING PACKING PIN NO. N37 3K/REEL N43 3K/REEL N49 3K/REEL Unless Otherwise noted SYMBLE MAXIMUM V ALUE UNIT V CBO V CEO V EBO 2.5 I C 120 mA P D 200 mW T j 150 T stg +150 ℃ T B C D N37 N43 N49 90~140 130~180 170~250 250~300 UNIT V V V mA mW T stg E 250~300 BFG540 BFG540-X BFG540-XR 1 of 4 REV.08
ELECTRICAL CHARACTERISTICS (T PARAMETER Collector-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transit frequency Output feedback capacitance Power gain Noise factor PACKAGE MODE TYPE PACKAGE MARKING BFG540 SOT -143B N37 BFG540-X SOT -143B N43 BFG540-XR SOT -143R N ELECTRICAL CHARACTERISTICS (T a =25 ℃ unless otherwise specified) SYMBLE MIN. TYP. MAX. UNIT V CBO V I CBO 0.1 μA I EBO 0.1 μA hFE* 60 150 300 f T GHz C re 0.65 1.0 pF | S e dB V NF 1.8 dB V 3.0 V MARKING PIN arrangement PIN 1 PIN 2 N37 Collector Base N43 Collector Emitter N Collector Emitter TEST CONDITION I C =1.0μA V CB =10V V EB =1V V CE =5V,I C =15mA V CE =8V,I C =40mA,f=1GHz V CB =10V,I E =0mA,f=1MHz V CE =8V,I C =40mA,f=0.9GHz V CE =10V,I C =10mA,f=0.9GHz V CE =10V,I C =40mA,f=0.9GHz arrangement PIN 3 PIN 4 Emitter Emitter Base Emitter Base Emitter BFG540 BFG540-X BFG540-XR 2 of 4 REV.08
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