BFG540 KEXIN | Alldatasheet

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www.kexin.com.cn 1 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 ■ Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage shorted base VCES 15 Emitter - Base Voltage VEBO 2.5 Collector Current - Continuous IC 120 Total power dissipation TS≤ 60 °C *1 Ptot 400 mW Thermal resistance from junction to soldering point *1 RthJS 290 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -65 to 150 *1: Ts is the temperature at the soldering point of the collector pin. V mA 2.90±0.1 X detail X 0~0.1 1.90 (Typ) 0.48 (max) 0.38 (min) 0.88 (max) 0.78 (min) 1.70 (Typ) 2.30±0.2 1.30±0.1 1.00±0.1 0.1(max) 0.55 (max) 0.45 (min) 0.15 (max) 0.09 (min) 0.45 (max) 0.15 (min) SOT-143 Unit:mm 1.Collector 2.Emitter 3.Base 4.Emitter

www.kexin.com.cn2 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 Notes 1. GUM is the maximum unilateral power gain, assuming s12 is zero and 2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C; Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q −r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. GUM 10 s21 2 ■ Electrical Characteristics Tj = 25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 15 Emitter - base breakdown voltage VEBO IE= 100 μA， IC= 0 2.5 Collector-base cut-off current ICBO VCB= 8 V , IE= 0 50 nA DC current gain hFE VCE= 8V, IC= 40mA 60 250 Emitter capacitance Ce IC=ic=0; VEB=0.5V; f=1MHz 2 Collector capacitance Cc IE=ie=0; VCB=8V; f=1MHz 0.9 Feedback capacitance Cre IC=0; VCB=8V; f=1MHz 0.5 Γs=Γopt; IC=10mA; VCE=8V;f=900MHz; Tamb=25℃ 1.3 1.8 Γs=Γopt; IC=40mA; VCE=8V;f=900MHz; Tamb=25℃ 1.9 2.4 Γs=Γopt; IC=10mA; VCE=8V;f=2GHz; Tamb=25℃ 2.1 IC=40mA; VCE=8V; f=900MHz;Tamb=25℃ 18 IC=40mA; VCE=8V; f=2GHz;Tamb=25℃ 11 Insertion power gain |S21e|2 IC=40mA; VCE=8V; f=900MHz;Tamb=25℃ 15 16 Output power at 1dB gain compression PL1 IC=40mA; VCE=8V; RL=50Ω;f=900MHz; Tamb=25℃ 21 Third order intercept point ITO Note 2 34 Output voltage VO Note 3 500 mV Second order intermodulation distortion d2 Note 4 -50 dB Transition frequency fT IC=40mA; VCE=8V; f=1GHz;Tamb=25℃ 9 GHz V pF Noise figure Power gain, maximum available (Note 1) GUM F dBm dB

www.kexin.com.cn 3 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 ■ Typical Characterisitics Fig.1 Power derating curve. handbook, halfpage 0 50 100 200 600 200 400 150 Ptot (mW) Ts (o C) VCE ≤ 10 V. Fig.2 DC current gain as a function of collector current. VCE = 8 V; Tj = 25 °C. handbook, halfpage 250 100 150 200 −2 10−1 1 10 102 hFE IC (mA) Fig.3 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage 0 4 Cre (pF) VCB (V)8 12 0.8 0.6 0.4 0.2 Fig.4 Transition frequency as a function of collector current. f = 1 GHz; Tamb = 25 °C. handbook, halfpage12 fT (GHz) IC (mA)10−1 1 10 102 VCE = 8 V VCE = 4 V

www.kexin.com.cn4 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 Fig.5 Gain as a function of collector current. VCE = 8 V; f = 900 MHz. MSG = maximum stable gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. handbook, halfpage 0 20 IC (mA)40 60 gain (dB) GUM Gmax MSG Fig.6 Gain as a function of collector current. VCE = 8 V; f = 2 GHz. Gmax = maximum available gain; GUM = maximum unilateral power gain. 0 20 IC (mA)40 60 gain (dB) GUM Gmax Fig.7 Gain as a function of frequency. IC = 10 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage50 gain (dB) 10 10 2 103 104 f (MHz) MSG GUM Gmax Fig.8 Gain as a function of frequency. gain (dB) 10 102 103 104 f (MHz) MSG GUM Gmax IC = 40 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.

www.kexin.com.cn 5 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 Fig.9 Intermodulation distortion as a function of collector current. handbook, halfpage 0601 −20 −70 −60 −50 −40 −30 20 30 40 dim (dB) IC (mA) Fig.10 Second order intermodulation distortion as a function of collector current. 0601 −20 −70 −60 −50 −40 −30 20 30 40 (dB) IC (mA) Fig.11 Minimum noise figure and associated available gain as functions of collector current. VCE = 8 V. handbook, halfpage5 2 5 Gass (dB) Fmin (dB) IC (mA) 1 10210

2000 MHz

1000 MHz

f = 900 MHz Gass Fmin

900 MHz

500 MHz

Fig.12 Minimum noise figure and associated available gain as functions of frequency. VCE = 8 V. handbook, halfpage5 2 5 Gass (dB) Fmin (dB) f (MHz) 102 104103 Gass 10 mA Fmin 40 mA 40 mA IC = 10 mA

www.kexin.com.cn6 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 Fig.13 Noise circle figure. IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz. handbook, full pagewidth MRA762 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 F = 1.5 dB 1 2 5 180° −135° −90° −45° 45° 90° 135° F = 2 dB F = 3 dB Fmin = 1.3 dB OPT IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz. Fig.14 Noise circle figure. handbook, full pagewidth MRA763 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° OPT MS F = 2.5 dB F = 3 dB F = 4 dB G = 10 dB G = 9 dB G = 8 dB Gmax = 11.4 dB Fmin = 2.1 dB

www.kexin.com.cn 7 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11). MRA756 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5

3 GHz

180° −135° −90° −45° 45° 90° 135°

40 MHz

Fig.16 Common emitter forward transmission coefficient (s21). IC = 40 mA; VCE = 8 V. MRA757 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135°

www.kexin.com.cn8 TransistorsSMD Type NPN 9GHz Wideband Transistor BFG540 Fig.17 Common emitter reverse transmission coefficient (s12). IC = 40 mA; VCE = 8 V. MRA758 0.25 0.20 0.15 0.10 0.05 180° −90° −135° −45° 45° 90° 135° Fig.18 Common emitter output reflection coefficient (s22). handbook, full pagewidth MRA759 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° IC = 40 mA; VCE = 8 V; Zo = 50 Ω.