BFG425W SKTECHNOLGY | Alldatasheet

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Technical content

Microwave, low noise, SiGe NPN HBT UHF 25 GH Z , low noise transistor with adoption of subminiature SOT-343R package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high frequency low noise amplifier.

FEATURES

  • Top: -55℃~+85℃
  • N F =1.2dB，Ga=17dB(TYP) @V CE =2V
  • Gmax=20dB(Typ) @ VCE=2V

APPLICATIONS

  • RF front end
  • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
  • Radar detectors
  • Pagers
  • Satellite television tuners (SATV)
  • High frequency oscillators. Absolute maximum rating SYMBOL PARAMETER Ic collector-current Ptot total power dissipation Tj operating junction temperature NPN HBT SiGe HBT technique, high power gain, low noise and large dynamic range. T package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high frequency low noise amplifier. =2V C =25mA，f=2GHz @ VCE=2V ，IC=25mA，f=2GHz
  • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) MAX. UNIT 30 V 135 mW operating junction temperature 150 mA HBT technique, high power gain, low noise and large dynamic range. T he package, especially suitable for high density surface patch installation, mainly for the BFG425W 1 of 4 REV.08

j = 25 °C unless otherwise SYMBOL PARAMETER V (BR)CBO Collector base breakdown voltage V (BR)CEO collector- emitter breakdown voltage V (BR)EBO emitter base breakdown voltage I CBO collector- base leakage current H FE DC current gain f T transition frequency G max maximum power gain insertion power gain N F noise figure P 1dB output power at 1 dB gain compression TYPICAL CHARACTERISTICS （IC = 25 mA; VCE = 2 V） Fig.1 Common emitter input reflection coefficient (S11); typical values = 25 °C unless otherwise specified. PARAMETER CONDITIONS MIN. Collector base breakdown voltage I C =2.5uA，I E =0 9 emitter breakdown voltage I C =1mA，I B =0 4.5 emitter base breakdown voltage I E =2.5uA，I C =0 1 base leakage current I E =0，V CB =4.5V - V CE =2V，I C =25mA 50 V CE =2V，I C =25mA，f=2GHz V CE =2V，I C =25mA，f=2GHz V CE =2V，I C =25mA，f=2GHz V CE =2V，f=900MHz，S= Г opt V CE =2V，f=2GHz，S= Г opt output power at 1 dB gain I O =25mA，V CE =2V， f=2GHz，Z S Sopt L Lopt Fig.1 Common emitter input reflection coefficient (S11); typical values TYP. MAX. UNIT V - - V - - V - 100 nA 100 150 - 25 - GHz 20 - dB 17 - dB 0.8 - dB 1.2 - dB 12 - dBm Fig.1 Common emitter input reflection coefficient (S11); typical values BFG425W 2 of 4 REV.08

Fig.2 Common emitter forward transmission coefficient (S21); typical values. Fig.3 Common emitter reverse transmission coefficient (S12); typical values C = 25 mA; V CE = 2 V .） Fig.2 Common emitter forward transmission coefficient (S21); typical values. S CE = 2V，I C = 25mA） emitter reverse transmission coefficient (S12); typical values Fig.2 Common emitter forward transmission coefficient (S21); typical values. emitter reverse transmission coefficient (S12); typical values BFG425W 3 of 4 REV.08

Fig.4 Common emitter output reflection coefficient (S22); typical values SOT-343R Dimension S CE =2V ,I C =25mA) Fig.4 Common emitter output reflection coefficient (S22); typical values Fig.4 Common emitter output reflection coefficient (S22); typical values BFG425W 4 of 4 REV.08