BFG425W

BFG425W KEXIN | Alldatasheet

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www.kexin.com.cn 1 Transistors NPN Transistors BFG425W ■ Features

• Very high power gain
• Low noise figure
• 25 GHz wideband transistor
• Emitter is thermal lead
• Low feedback capacitance. SOT343R 1.Emitter 3.Emitter 2.Base 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 4.5 Emitter - Base Voltage VEBO 1 Collector Current - Continuous IC 30 mA Collector Power Dissipation See Fig.1 (Note.1) PC 135 mW Thermal Resistance From Junction To Soldering Point Rthj-s 350 K/W Junction Temperature TJ 150 Storage Temperature Range Tstg -65 to 150 V Note.1 : Ts is the temperature at the soldering point of the emitter pins.

www.kexin.com.cn2 Transistors NPN Transistors BFG425W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 10 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 4.5 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 1 Collector-base cut-off current ICBO VCB= 4.5 V , IE= 0 15 nA DC current gain hFE VCE= 2V, IC= 25mA See Fig.2 50 80 120 Maximum power gain (Note.1) Gmax IC = 25 mA ,VCE = 2 V, f = 2 GHz Tamb = 25 °C see Figs 6 and 7 20 Insertion power gain |S21| IC = 25 mA ,VCE = 2 V , f = 2 GHz Tamb = 25 °C see Fig.7 17 IC = 2 mA , VCE = 2 V , f = 900 MHz GS = Gopt see Fig.12 0.8 IC = 2 mA , VCE = 2 V, f = 2 GHz ΓS = Γopt see Fig.12 1.2 Output power at 1 dB gain compression PL1 IC = 25 mA ,VCE = 2 V , f = 2 GHz , ZS = ZS opt , ZL = ZL opt (Note.2) 12 Third order intercept point ITO IC = 25 mA , VCE = 2 V , f = 2 GHz , ZS = ZS opt , ZL = ZL opt (Note.2) 22 Collector capacitance Cc IE = ie = 0 , VCB = 2 V , f = 1 MHz 300 Emitter capacitance Ce IC = ic = 0 , VEB = 0.5 V , f = 1 MHz 575 Feedback capacitance Cre IC = 0 , VCB = 2 V , f = 1 MHz see Fig.3 95 Transition frequency fT VCE= 2V, IC= 25mA,f=2GHz See Fig.4 25 GHz V f F Noise figure NF dB dBm Note.1 : Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 5, 6 and 7. Note.2 : ZS is optimized for noise; ZL is optimized for gain. ■ Marking Marking P5 ■ Typical Characterisitics Fig.1 Power derating curve. handbook, halfpage 061040 200 150 100 80 120 MGG681 Ts (°C) Ptot (mW)

www.kexin.com.cn 3 Transistors NPN Transistors BFG425W ■ Typical Characterisitics Fig.2 DC current gain as a function of collector current; typical values. (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. handbook, halfpage 0402010 30 MGG682 120 IC (mA) hFE (3) (2) (1) IC = 0; f = 1 MHz. Fig.3 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 510 200 120 160 2 3 4 MGG683 VCB (V) Cre (fF) Fig.4 Transition frequency as a function of collector current; typical values. VCE = 2 V; f = 2 GHz; Tamb = 25 °C. handbook, halfpage25 MGG684 01011 2 fT (GHz) IC (mA) VCE = 2 V; f = 900 MHz. Fig.5 Maximum stable gain as a function of collector current; typical values. handbook, halfpage 0402010 30 MGG685 IC (mA) MSG (dB)

www.kexin.com.cn4 Transistors NPN Transistors BFG425W ■ Typical Characterisitics VCE = 2 V; f = 2 GHz. Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 03010 0402 MGG686 IC (mA) gain (dB) MSG Gmax IC = 25 mA; VCE = 2 V. Fig.7 Gain as a function of frequency; typical values. handbook, halfpage50 10 102 103 104 MGG687 f (MHz) gain (dB) MSG Gmax S21 Fig.8 Common emitter input reflection coefficient (S11); typical values. IC = 25 mA; VCE = 2 V; Zo = 50 Ω. MGG689 handbook, full pagewidth MGG689 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

40 MHz

3 GHz

www.kexin.com.cn 5 Transistors NPN Transistors BFG425W ■ Typical Characterisitics Fig.9 Common emitter forward transmission coefficient (S 21); typical values. IC = 25 mA; VCE = 2 V. MGG690 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135°

40 MHz 3 GHz

IC = 25 mA; VCE = 2 V. Fig.10 Common emitter reverse transmission coefficient (S12); typical values. handbook, full pagewidth MGG691 180° −135° −90° −45° 45° 90° 135°

www.kexin.com.cn6 Transistors NPN Transistors BFG425W ■ Typical Characterisitics Fig.11 Common emitter output reflection coefficient (S22); typical values. IC = 25 mA; VCE = 2 V; Zo = 50 Ω. handbook, full pagewidth MGG692 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° VCE = 2 V; typical values. f (MHz) IC (mA) Fmin (dB) mag angle rn (Ω) 900 1 0.7 0.67 19.1 0.40 2 0.8 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.6 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19 2000 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25 Fig.12 Minimum noise figure as a function of the collector current; typical values. (1) VCE = 2 V; f = 2 GHz. (2) VCE = 2 V; f = 900 MHz. handbook, halfpage 0 10 20 30 MGG688 IC (mA) Fmin (dB) (1) (2) ΓΓ

www.kexin.com.cn 7 Tran sistors ■ Typical Application NPN Transistors BFG425W PACKAGE OUTLINE sdael 4 ;gninnip esrever ;egakcap detnuom ecafrus citsalP SOT343R D A Lp Q detail X c HE E v M A AB 0 1 2 mm scale X w M B bp UNIT max bp c D Eb1 HE Lp Q wv mm 0.11.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 0.2 y 0.10.21.15 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 A e y