BFG425W AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com BFG425W GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE REV1.0 - OCT 2016 RELEASED - - 1 - DESCRIPTION FEATURES UHF 25 GH z, low noise transistor with SiGe HBT technique, high power gain, low noise and large dynamic range. The adoption of subminiature SOT-343 package, especially suitable for high density surface patch installation, mainly for t he VHF, UHF broadband high frequency low noise amplifier. The BFG425W is available in SOT-343 package. High transition frequency Top: -55℃~+85℃ NF=1.2dB, Ga=17dB(TYP) @VCE=2V, IC=25mA, f=2GHz Gmax=20dB(Typ) @VCE=2V, IC=25mA, f=2GHz Available in SOT-343 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-343 BFG425W Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) High frequency oscillators. PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com BFG425W GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE REV1.0 - OCT 2016 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS IC, Collector-Current 30mA Ptot, Total Power Dissipation 135mV TJ, Operating Junction Temperature 150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Collector Base Breakdown Voltage V(BR)CBO IC=2.5uA，IE=0 9 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA，IB=0 4.5 - - V Emitter Base Breakdown Voltage V(BR)EBO IE=2.5uA，IC=0 1 - - V Collector-Base Leakage Current ICBO IE=0，VCB=4.5V - - 100 nA DC Current Gain hFE VCE=2V，IC=25mA 50 100 150 - Transition Frequency fT VCE=2V，IC=25mA，f=2GHz - 25 - GHz Maximum Power Gain Gmax VCE=2V，IC=25mA，f=2GHz - 20 - dB Insertion Power Gain |S21|2 VCE=2V，IC=25mA，f=2GHz - 17 - dB Noise Figure NF VCE=2V，f=900MHz，S= Гopt - 0.8 - dB VCE=2V，f=2GHz，S= Гopt - 1.2 - dB Output Power at 1 dB Gain Compression P1dB IO=25mA，VCE=2V， f=2GHz，ZS=ZSopt，ZL=ZLopt - 12 - dBm
AiT Semiconductor Inc. www.ait-ic.com BFG425W GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE REV1.0 - OCT 2016 RELEASED - - 5 -
PACKAGE INFORMATION
Dimension in SOT-343 (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com BFG425W GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE REV1.0 - OCT 2016 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical ap plications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks assoc iated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.