BFG19S INFINEON | Alldatasheet

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/G01 For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA VPS051631 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFG 19S BFG19S 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 mA Base current IB 12 Total power dissipation, TS /G01 75 °C 1) Ptot 1 W Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS /G01 75 K/W 1TS is measured on the collector lead at the soldering point to the pcb

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.85 1.4 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 4.6 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 2.5 dB Power gain, maximum available F) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 13.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 Third order intercept point I C = 70 mA, VCE = 8 V, ZS = ZL= 50/G01 , f = 900 MHz IP3 - 35 - dBm

Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 Ptot TS TA Permissible Pulse Load RthJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB) f = 1MHz 0 4 8 12 16 V 22 VCB 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 pF 2.6 Ccb Transition frequency fT = f (IC) VCE = Parameter 0 20 40 60 80 mA 120 IC 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 0.7V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V

Power Gain Gma, Gms = f(VCE):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 1.8GHz 0.9GHz IC=70mA Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 20 40 60 80 mA 120 IC dBm IP3 Power Gain Gma, Gms = f(f) VCE = Parameter f dB G 10V 0.7V IC=70mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=70mA