BFG193 INFINEON | Alldatasheet

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/G01 For low noise, high-gain amplifiers up to 2 GHz /G01 For linear broadband amplifiers /G01 fT = 8 GHz F = 1.3 dB at 900 MHz VPS051631 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFG193 BFG193 1 = E 2 = B 3 = E 4 = C SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 mA Base current IB 10 Total power dissipation TS /G01 87 °C 1) Ptot 600 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.6 0.9 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 2 - Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 1.3 2.1 dB Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 15.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 13.5

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 250 300 350 400 450 500 550 600 mW 700 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 V 22 VCB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC) V CE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 GHz 9.0 fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 10 20 30 40 50 60 70 mA 90 IC dB G 10V 0.7V

Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =30mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 10 20 30 40 50 60 mA 80 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =30mA Power Gain |S21|2= f(f) V CE = Parameter f dB S21 10V 0.7V IC =30mA