BF998_08 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Integrated gate protection diodes  Low noise figure  Low feedback capacitance  High cross modulation performance  Low input capacitance  High AGC-range  High gain  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

 Input and mixer stages in UHF tuners Mechanical Data Typ: BF998 Case: SOT143 Plastic case Weight: approx. 8.0 mg Marking: MO Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: BF998R Case: SOT143R Plastic case Weight: approx. 8.0 mg Marking: MOR Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: BF998RW Case: SOT343R Plastic case Weight: approx. 6.0 mg Marking: WMO Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Parts Table Part Ordering code Type Marking Remarks BF998 BF998A-GS08 MO SOT143 BF998A BF998A-GS08 MO SOT143 BF998R BF998RA-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 WMO SOT343R

www.vishay.com Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Thermal Characteristics 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Parameter Test condition Symbol Value Unit Drain - source voltage V DS 12 V Drain current I D 30 mA Gate 1/Gate 2 - source peak current ± IG1/G2SM 10 mA Gate 1/Gate 2 - source voltage ± V G1S/G2S 7V Total power dissipation T amb ≤ 60 °C P tot 200 mW Channel temperature T Ch 150 °C Storage temperature range T stg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Channel ambient 1) RthChA 450 K/W Parameter Test condition Part Symbol Min. Typ. Max. Unit Drain - source breakdown voltage ID = 10 μA, - VG1S = - VG2S = 4 V V (BR)DS 12 V Gate 1 - source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V (BR)G1SS 71 4 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V (BR)G2SS 71 4 V Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0 ± I G1SS 50 nA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± I G2SS 50 nA Drain current VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/ BF998R/ BF998RW IDSS 41 8 m A BF998A/ BF998RA/ BF998RAW IDSS 4 10.5 mA BF998RBW IDSS 9.5 18 mA Gate 1 - source cut-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 μA- V G1S(OFF) 1.0 2.0 V Gate 2 - source cut-off voltage VDS = 8 V, VG1S = 0, ID = 20 μA- V G2S(OFF) 0.6 1.0 V Parameter Test condition Symbol Min. Typ. Max. Unit Forward transadmittance |y21s| 21 24 mS Gate 1 input capacitance Cissg1 2.1 2.5 pF Gate 2 input capacitance VG1S = 0, VG2S = 4 V C issg2 1.1 pF Feedback capacitance Crss 25 fF Output capacitance Coss 1.05 pF

Rev. 1.8, 05-Sep-08 Vishay Semiconductors www.vishay.com Common Source S-Parameters Tamb = 25 °C, unless otherwise specified VDS = 8 V, VG2S = 4 V, Z0 = 50 Ω Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz Gps 28 dB GS = 3,3 mS, GL = 1 mS, f = 800 MHz Gps 16.5 20 dB AGC range VG2S = 4 to -2 V, f = 800 MHz ΔGps 40 dB Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F1 . 0 d B GS = 3,3 mS, GL = 1 mS, f = 800 MHz F1 . 5 d B Parameter Test condition Symbol Min. Typ. Max. Unit ID/mA f/MHz S11 S21 S12 S22 LOG MAG ANG LOG MAG ANG LOG MAG ANG LOG MAG ANG deg deg deg deg

Figure 7. Transducer Gain vs. Gate 1 Source Voltage Figure 8. Forward Transadmittance vs. Drain Current Figure 9. Short Circuit Input Admittance

700 MHz

400 MHz

1000 MHz

100 MHz

Figure 10. Short Circuit Forward Transfer Admittance Figure 11. Short Circuit Output Admittance

1300 MHz

Figure 12. Input Reflection Coefficient Figure 13. Reverse Transmission Coefficient Figure 14. Forward Transmission Coefficient Figure 15. Output Reflection Coefficient

Rev. 1.8, 05-Sep-08 Vishay Semiconductors www.vishay.com 96 12240 foot print recommendation: 0.8 [0.031] 1.9 [0.075] 0.8 [0.031] 1.7 [0.067] 0.15 [0.006] 0.08 [0.003] 1.1 [0.043] 0.1 [0.004] max. 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1.8 [0.071] 2 [0.079] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] 1.6 [0.063] 2.8 [0.110] 3 [0.118] 2.35 [0.093] 0.5 [0.020] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 1.8 [0.071] 2 [0.079] 96 12239

www.vishay.com Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW Vishay Semiconductors 96 12238

Rev. 1.8, 05-Sep-08 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.