BF981 PHILIPS | Alldatasheet
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| | BF981 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-packaga with source and substrate interconnected, intended for VHF applications, such as VHF television tuners, FM tuners and professional cammuni- cation equipment, This MOS-FET tetrodg is protected against excessive input valtage surges by integrated back-to-back diodes between gates and source. QUICK REFERENCE DATA Orain-source voltage VYos max. 20 V Drain current 'p max. 20 mA Total power dissipation up ta Tapp = 75 OC Prot max, 225 mW Junction temperature Tj max. 160 9C Transfer admittance at f= 1 kHz ip = 10 mA; Vps= 10 V;+ Ve2s e4y lyfst typ. 14 mS Input capacitanes at geste 1; 4 = 1 MHz ip = 10 mA; Vpg = 10 V;+VGag=4V Cigi-s typ. 2.1 pF Feedback capscitance at f= 1 MHz Ip = 16 mA; Vos = 10 VitVGo574V Crs typ. 20 fF Noise figura at optimum source admittance Ip = 10 mA; Vos = 10 V; + Vga.5 = 4 V; f = 200 MHz F typ. 0.7 dB MECHANICAL DATA Dimensions in mm Fig. SOT103, 9,7? max Pinning | 1 = source 2 = drain 3 = gate 2 4= gate 1 Jess fumber Ki : af +4 [*~ tax) 4&6 445 °° 115 Vee a m m _ a2 ™ x a baa = ‘ 5 94 ¥ 5,b 3 | +! 1.2 max 17,4 mit rt TEAMS 2,7 max | December 1990 155