BF966 PHILIPS | Alldatasheet
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| BF966 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor In a plastic X-package with source and substrate interconnected, intended for u.h.f. applications in television tuners and professional communication equipment. This MOS-FET tetrode is protected against excessive input voltage surges by integrated back-to-back ~ diodes between gates and source. QUICK REFERENCE DATA Drain-source voltage Vps max. «= 20 V Drain-current Ip max. 30 mA Total power dissipation up to Tamb = 75 °C Prot max. = 225 mW Junction temperature yy max. 150 °C Transfer admittance at f = 1 kHz Ip = 10 mA; Vpg = 18 V:+Vg2-g=4V Ivfsl typ. 17 mS Feedback capacitance at f= 1 MHz Ip = 10 mA; Vps = 15 V;+Vg2g=4V Crs typ. 25 fF Noise figure at Gg = 2 mS; Bs = Bg opt ans Ip = 10 mA; Vpg = 15 V; + Vg2.g = 4 V; f = 800 MHz F typ, —- 2,8 dB MECHANICAL DATA Dimensions in mm Fig. 1 SOT-103. 07max cu 4 | - type number marking " “ o— Simin 81min» 94 4 (3x) PFT a q 4 0,24 max 68max pe ren July 1987 245
BF9O66 | RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain source voltage Vps max. = 20V Drain current (d.c. or average) Ip max. 30 mA Gate 1 - source current tigt.g max. 10 mA Gate 2 -source current tlg2g max. 10 mA Total power dissipation up to Tamb = 75 °C Prot max. «= 225 mW Storage temperature Tstg 65 to +150 °C Junction temperature Tj max. 160 °C THERMAL RESISTANCE From junction to ambient in free air mounted on the printed-circuit board (see Fig. 2) Rthia = 335 KW Dimensions in mm Fy Lf Ie] | | tp to Leel (1) Connection made by a strip or Cu wire. Fig. 2 Single-sided 35 um Cu-clad epoxy fibre-glass printed-circuit board, thickness 1,5 mm. Tracks are fully tin-lead plated, Board in horizontal position for Ry, measurement.
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Silicon n-channel dual gate MOS-FET BF966 STATIC CHARACTERISTICS Tamb = 25 °C Gate cut-off currents £VG1.¢= 5 V:Ve2.g= Vps=0 tlgtss < 50 nA £VG2.5= 5 V:VG1-s= Vps=0 tlg2-ss < 50 nA Gate-source breakdown voltages £1g1.s5 = 10 mA; Vg2.g= Vps=0 +V(pR)Gi-ss «6,0 to 20 V #1g2-s5 = 10 mA; Vq1-s= Vps=0 *V(BR)G2SS 6,0 to20 V Drain current* Vps= 15 V; Vg1.¢=0:+Vg2g=4V . Ipss 2to0 20 mA Gate-source cut-off voltages Ip = 20uA; Vpg = 18 V:+Vg2g=4V —Vipjets <5 V Ip = 20HA; Vpg = 15 V; Vg1.g=0 -~Vpje2s << 20V DYNAMIC CHARACTERISTICS Measuring conditions (common source): Ip = 10 mA; Vpg = 18 V; +Vg2.g = 4 V; Tamb = 25 OC . - > 15 mS Transfer admittance at f = 1 kHz vest ye. 17 mS ot typ. 2,2 pF Input capacitance at gate 1; f = 1 MHz Cigts < 26 oF Input capacitance at gate 2; f= 1 MHz Ciga-s typ. 1,1 pF = typ. 25 fF Feedback capacitance at f= 1 MHz Crs = os fe oO = typ. 0,8 pF jutput capacitance at f= 1 MHz Cos SoBe Noise figure at Gg = 2 mS; Bg = Bg opt f= 200 MHz F typ. 1,5 dB f= 800 MH: typ. 2,8 dB F < 39 4B Power gain at Gg = 2 mS; Bg = Bg opt GL =0,5 mS; BL = By opt; f = 200 MHz Gp typ. 25 dB GL= _ 1mS; By = By, opt; f= 800 MHz Gp typ. 18 dB * Measured under pulse conditions. | | July 1987 247