BF870 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04

1996 Dec 09

BF870; BF872 PNP high-voltage transistors M3D067

1996 Dec 09 2

Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872

FEATURES

  • Low feedback capacitance.

APPLICATIONS

  • For use in class-B video output stages of colour television receivers.

DESCRIPTION

PNP transistors in a TO-202 plastic package. NPN complements: BF869 and BF871. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to mounting base 3 base Fig.1 Simplified outline (TO-202) and symbol. handbook, halfpage 12 3 MBH792 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF870 −− 250 V BF872 −− 300 V VCEO collector-emitter voltage open base BF870 −− 250 V BF872 −− 300 V ICM peak collector current −− 100 mA Ptot total power dissipation T mb ≤ 25 °C − 5W hFE DC current gain I C = −25 mA; VCE = −20 V; Tj=2 5°C5 0 − C re feedback capacitance I C =ic = 0; VCE = −30 V; f = 1MHz − 2.2 pF fT transition frequency I C = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz

1996 Dec 09 3

Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF870 −− 250 V BF872 −− 300 V VCEO collector-emitter voltage open base BF870 −− 250 V BF872 −− 300 V VEBO emitter-base voltage open collector −− 5V IC collector current (DC) −− 50 nA ICM peak collector current −− 100 mA IBM peak base current −− 50 mA Ptot total power dissipation T amb ≤ 25 °C − 1.6 W Tmb ≤ 25 °C − 5W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient 78 K/W R th j-mb thermal resistance from junction to mounting base 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = −200 V −− 10 nA IE = 0; VCB = −200 V; Tj= 150°C −− 10 µA IEBO emitter cut-off current I C = 0; VEB = −5V −− 50 nA hFE DC current gain I C = −25 mA; VCE = −20 V 50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5m A −− 600 mV C re feedback capacitance I C =ic = 0; VCE = −30 V; f = 1MHz − 2.2 pF fT transition frequency I C = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz

1996 Dec 09 4

Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872 PACKAGE OUTLINE Fig.2 TO-202. Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. handbook, full pagewidth 10.4 max 3.8 3.6 12.2 min 12 3 8.6 max 4.6 max 0.8(3x) 2.542.54 2.5 max(1) 2.4 max 3.8 24.2 max 0.65 max 0.56 max 1.6 0.6 MGA322

1996 Dec 09 5

Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.