BF840 KEXIN | Alldatasheet
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Technical content
Features
Low current (max. 25 mA). Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 40 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 4V Collector current I C 25 mA Peak collector current I CM 25 mA Total power dissipation * P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO IE =0 ;V cB = 20 V 100 nA Emitter cutoff current I EBO Ic = 0; VEB = 4 V 100 nA DC current gain h FE Ic = 1 mA; VcE = 10 V 67 222 Base to emitter voltage V BE Ic = 1 mA; VcE = 10 V 675 725 775 mV Feedback capacitance C re Ic = 0; VcB =1 0V ;f=1M H z 0 . 3 p F Transition frequency f T Ic = 1 mA; VcE = 10 V; f = 100 MHz 380 MHz Marking Marking NC