BF824W KEXIN | Alldatasheet
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Technical content
Features
Low current (max. 25 mA). Low voltage (max. 30 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -30 V Collector-emitter voltage V CEO -30 V Emitter-base voltage V EBO -4 V Collector current I C -25 mA Peak collector current I CM -25 mA Total power dissipation * P tot 200 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 625 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = -30 V -50 nA IE =0 ;VCB = -30 V; Tj = 150 -10 ìA Emitter cutoff current I EBO IC =0 ;VEB =- 4V - 1 0 0 n A IC =- 1m A ;VCE =- 1 0V 2 5 IC =- 4m A ;VCE =- 1 0V 2 5 Base to emitter voltage V BE IC =- 4m A ;VCE =- 1 0V - 9 0 0 m V Feedback capacitance C rb IC =0 ;VCE = -10 V; f = 1 MHz 0.3 pF Transition frequency f T VCE =- 1 0V ;f=1 0 0M H z ; IC =- 1m A IC =- 4m A IC =- 8m A 250 400 390 MHz h FEDC current gain Collector cutoff current I CBO Marking Marking F8