BF821 KEXIN | Alldatasheet
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Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage BF821 -300 V BF823 -250 V Collector-emitter voltage BF821 -300 V BF823 -250 V Emitter-base voltage V EBO -5 V Collector current I C -50 mA Peak collector current I CM -100 mA Peak base current I BM -50 mA Total power dissipation * P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. VCEO VCBO hFE Classification TYPE BF821 BF823 Marking 1W 1Y Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = -200 V -10 nA IE =0 ;VCB = -200 V; Tj = 150 -10 ìA Emitter cutoff current I EBO IC =0 ;VEB =- 5V - 5 0 n A DC current gain h FE IC =- 2 5m A ;VCE =- 2 0V 5 0 collector-emitter saturation voltage V CEsat IC =- 3 0m A ;IB = -5 mA -800 mV Feedback capacitance C re IC =i c=0 ;VCB = -30 V; f = 1 MHz 1.6 pF Transition frequency f T IC =- 1 0m A ;VCE = -10 V; f = 100 MHz 60 MHz Collector cutoff current I CBO