BF823

BF821 DIOTEC | Alldatasheet

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Technical content

1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 8 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BF 821, BF 823 High Vo ltage Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BF 821 BF 823 Collector-Emitter-voltage B open - V CE0 300 V 250 V Collector-Base-voltage E open - V CB0 300 V 250 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) - I C 50 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 100 mA Peak Base current – Basis-Spitzenstrom - I BM 50 mA Junction temperature – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V - I CB0 – – 10 nA IE = 0, - VCB = 200 V, Tj = 150/g47C- I CB0 – – 10 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - I EB0 – – 50 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) - IC = 30 mA, - IB = 5 mA - V CEsat – – 800 mV

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 901.11.2003 High Voltage Transistors BF 821, BF 823 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 20 V, - IC = 25 mA h FE 50 – – Gain-Bandwidth Product – Transitfrequenz - VCE = 10 V, - IC = 10 mA, f = 100 MHz f T 60 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 30 V, IE = ie = 0, f = 1 MHz C CB0 – 1.6 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BF 820, BF 822 Marking - Stempelung BF 821 = 1W BF 823 = 1Y