BF822W KEXIN | Alldatasheet
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Low current (max. 50 mA) High voltage (max. 250 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) V CBO 250 V Collector-emitter voltage (open base) V CEO 250 V Emitter-base voltage (open collector) V EBO 5V Collector current I C 50 mA Peak collector current I CM 100 mA Peak base current I BM 50 mA Total power dissipation * (Tamb 25 ;) Ptot 200 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 625 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = 200 V 10 nA IE =0 ;VCB = 200 V; Tj = 150 10 ìA Emitter cutoff current I EBO IC =0 ;VEB =5V 5 0 n A DC current gain h FE IC =2 5m A ;VCE =2 0V 5 0 Collector-emitter saturation voltage * V CEsat IC =3 0m A ;IB = 5 mA 600 mV Feedback capacitance C re IC =0 ;VCB =3 0V ;f=1M H z 1 . 6 p F Transition frequency f T IC =1 0m A ;VCE = 10 V; f=100MHz 60 MHz * Pulse test: tp 300 ìs; ä 0.02. ICBOCollector cutoff current Marking Marking 1W