BF822

BF720 DIOTEC | Alldatasheet

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Technical content

1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 10 01.11.2003 321 ±0.1 6.5 ±0.2 0.7 3.25 2.3 ±0.3 1.65 3.5 ±0.2 BF 720, BF 722 High Vo ltage Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.5 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BF 720 BF 722 Collector-Emitter-voltage B open V CE0 300 V 250 V Collector-Base-voltage E open V CB0 300 V 250 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 1.5 W 1) Collector current – Kollektorstrom (dc) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Peak Base current – Basis-Spitzenstrom I BM 100 mA Junction temperature – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 200 V I CB0 – – 10 nA IE = 0, VCB = 200 V, Tj = 150/g47CI CB0 – – 10 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V I EB0 – – 50 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 30 mA, IB = 5 mA V CEsat – – 600 mV

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1101.11.2003 High Voltage Transistors BF 820, BF 822 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 20 V, IC = 25 mA h FE 50 – – Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 25 mA, f = 100 MHz f T 50 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 30 V, IE = ie = 0, f = 1 MHz C CB0 – – 1.6 pF Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft R thA 87 K/W 2) junction to soldering point – Sperrschicht zu Lötpad R thS 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BF 721, BF 723