BF820 CDIL | Alldatasheet
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Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X ABSOLUTE MAXIMUM RATINGS BF820 BF822 Collector–base voltage (open emitter) V CB0 max. 300 250 V Collector–emitter voltage (open base) V CE0 max. – 250 V Collector–emitter voltage (RBE = 2,7 k W)V CER max. 300 — V Collector current (peak value) I CM max. 100 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Junction temperature T j max. 150 ° C D.C. current gain IC = 25 mA; V CE = 20 V h FE >5 0 Feedback capacitance at f = 1 MHz IC = 0; V CE = 30 V C re < 1,6 pF Transition frequency at f = 35 MHz IC = 10mA; V CE = 10 V f T >6 0 MHz BF820 BF822 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at T A = 25°C unless otherwise specified) Limiting values BF820 BF822 Collector–base voltage (open emitter) V CB0 max. 300 250 V Collector–emitter voltage (open base) V CE0 max. – 250 V Collector–emitter voltage (RBE = 2,7 k W)V CER max. 300 — V Emitter–base voltage (open collector) V EB0 max. 5 V Collector current (d.c.) I C max. 50 mA Collector current (peak value) I CM max. 100 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Storage temperature T stg –55 to +150 ° C Junction temperature T j max. 150 ° C THERMAL RESISTANCE From junction to ambient R th j–a 500 K/W CHARACTERISTICS BF820 BF822 Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; V CB = 200 V I CB0 <1 0 1 0 n A Collector–emitter voltage RBE = 2,7 k W; VCE = 250 V I CER <5 0 5 0 n A RBE = 2,7k W; V CE = 200V; T j = 150°C I CER <1 0 1 0 mA Saturation voltage IC = 30 mA; l B = 5 mA V CEsat < 0,6 V D.C. current gain IC = 25 mA; V CE = 20 V h FE >5 0 Transition frequency at f = 35 MHz lC = 10 mA; V CE = 10 V f T >6 0 MHz Feedback capacitance at f = 1 MHz IC = 0; V CE = 30 V C re < 1,6 pF BF820 BF822
Continental Device India Limited Data Sheet Page 3 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com