BF763 PHILIPS | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BF763 NPN 2 GHz wideband transistor
Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF763
DESCRIPTION
NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN DESCRIPTION Code: F763 1 emitter 2 base 3 collector Fig.1 SOT54. MSB034 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CEO collector-emitter breakdown voltage open base 15 −− V IC DC collector current −− 25 mA Ptot total power dissipation up to T amb =6 0°C −− 360 mW hFE DC current gain I C = 5 mA; VCE = 10 V; Tj=2 5°C2 5 − 250 fT transition frequency I C = 5 mA; VCE = 10 V; f = 100 MHz− 1.8 − GHz SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 25 V IC DC collector current − 25 mA Ptot total power dissipation up to T amb =6 0°C − 360 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-a thermal resistance from junction to ambient in free air 250 K/W
Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF763 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB =0 1 5 −− V V(BR)CBO collector-base breakdown voltage IC =1 0µA; IE =0 2 5 −− V VCE sat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA −− 0.5 V ICBO collector cut-off current I E = 0; VCB = 10 V −− 50 nA hFE DC current gain I C = 5 mA; VCE = 10 V 25 − 250 fT transition frequency I C = 5 mA; VCE = 10 V; f = 100 MHz− 1.8 − GHz F noise figure I C = 5 mA; VCE = 10 V; f = 800 MHz; Tamb =2 5°C; Zs =6 0Ω − 5.0 − dB
Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF763 PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 (1) max max 2.5 2.5 0.66 0.56 DIMENSIONS (mm are the original dimensions) Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 variant TO-92 SC-43 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant e 97-04-14
Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF763 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.