BF720 ZETEX | Alldatasheet

Document overview

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Technical content

C C E B SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – MARCH 2001 ✪

FEATURES

  • High breakdown and low saturation voltages

APPLICATIONS

  • Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:- BF721 PARTMARKING DETAILS:- BF720 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 300 V Collector-Emitter Voltage V CEO 300 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 100 mA Continuous Collector Current I C 50 mA Power Dissipation at T amb =25°C P tot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=10 µ A, I E=0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 V I C=1mA, I B=0* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100 µ A, I C=0 Collector Cut-Off Current I CBO 10 nA V CB=200V, I E=0 Collector Cut-Off Current ICER 50 nA µ A VCE=200V, R BE=2.7K Ω VCE=200V, R BE=2.7k Ω † Emitter Cut-Off Current I EBO 10 µ A VEB=5V, I C=0 Collector-Emitter Saturation Voltage VCE(sat) 0.6 V I C=30mA, I B=5mA* Base Emitter Saturation Voltage VBE (sat) 0.9 V I C=20mA, I B=2mA* Static Forward Current Transfer Ratio hFE 50 I C=25mA, V CE=20V* Transition Frequency f T 100 MHz I C=10mA, V CE=10V f=100MHz Output Capacitance C obo 0.8 pF V CB=30V, f=1MHz †Tamb =150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA42 datasheet. BF720 TBA