BF679 TELEFUNKEN | Alldatasheet
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Silizium-PNP-HF-Transistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Eingangsstufen BF 680: UHF/VHF-Oszillator und Mischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and mixer stages Besondere Merkmale: Features: @ Hohe Verstarkung @ High power gain @ Kleine Rauschzahlen @ Low noise figures @ Hohe Riickwartscampfung @ High reverse attenuation || Vorldufige technische Daten - Preliminary specifications Abmessungen in mm Dimensions in mm el “25 = pe ey ——— = ss my, Kunststoffgehdiuse
5 Plastic case
+ {il | ~JEDEC TO 50 soe. toi Ke oz Gewicht - Weight max. 0,25 g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung -Ucpo 40 7 Collector-base voltage Kollektor-Emitter-Sperrspannung ~UcEO 35 v Collector-emitter voltage Emitter-Basis-Sperrspannung -UEBO 3 v Emitter-base voltage Kollektorstrom Io 30 mA Collector current Basisstrom Ip 5 mA Base current Gesamtverlustleistung Total power dissipation famb = 55°C Prot 160 mw Sperrschichttemperatur 5 150 °c Junation temperature Lagerungstemperaturbereich ‘stg 55... +150 °c Storage temperature range B 2/V.2.574/0875A1 299
Warmewiderstand Min, Typ. Max. Thermat resistance Sperrschicht-Umgebung RtnJa 600 °C/W Junction ambient Statische KenngréBen DC characteristics tamb = 25°C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current — Ugg = 20V -IeB0 100 nA Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage ~Ig = 10 pA -Uerycso 49 v Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage =I = 2mA -Ueryceo'’) 35 v Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage = Ig = 10 pA -UeReBo | 3 v Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio Ugp = 10V, Ig = 3mA fee 25 Dynamische KenngréBen AC characteristics famb = 25°C Transitfrequenz Gain bandwidth product —Ucp = 10V, “Ig = 2 mA, f = 100 MHz BF679 fy 880 MHz BF680 fy 750 MHz Kollektor-Basis-Kapazitat Collector-base capacitance ~ Ugg = 10, f = 100 MHz CcBo 05 pF —_—. ') B01, 1) =0.9ms 300
Min, Typ. Max. RauschmaB Noise figure —Ucp = 10V, ~Ig = 3 mA, Rg = 509, £ = 800 MHz, Ry = 500 Q, Rg = 3900 BF679 °F, 35 50 dB BF680 Fi, 48 60 dB Leistungsverstarkung Power gain - Ugg = 10 V, -Ig = 3 mA, f = 800 MHz, Rg = 50Q, Ri = 5009, Rg = 3000 BF679— Gpp)) 10,5 12 dB BF680)— Gpp’) 10 12 dB Kollektorstrom fiir Collector current for -20 dB Gp» max BF679 -I¢ 9 mA -30 dB Gp max BF 679 -/¢ 10 mA Leistungsverstarkung Power gain ~ Ugg = 10,8 V, ~Ig = 3 mA, Ry = 2kQ, Ro = 820Q BF679 Gop) 12 15 aB BF680 = Gop) "1 14 dB Kollektorstrom fir: _. 5; - Collector current for: ~°098 Spbmax Ic 7 mA 500 470 pF AL 4 CyCq 20...2 oF C4 2. 500 510 a TAF Ea Re 751783 “ep “Yop MeBschaltung fiir: Test circuit for: Spb *) siehe MeBschaltung 00 test circuit 301
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