BF622 DGNJDZ | Alldatasheet

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Technical content

  1. COLLECTOR 3. EMITTER BF622 TRANSI STOR (NPN)

FEATURES

MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO I C= 100µA,IE= 0 250 V Co llector-emitter breakdown voltage V(B R)CEO IC=1 mA,IB= 0 250 V Emitter-b ase breakdown voltage V( BR)EBO I E= 100µA,IC=0 5 V Co llector cut-off current ICB O V CB= 200V,IE= 0 10 nA Emitter cut-off current IEBO V EB=5 V,IC= 0 50 nA DC cu rrent gain hFE V CE= 20V, IC= 25mA 50 Co llector-emitter saturation voltage VCE (sat) I C= 30mA,IB=5 mA 0.6 V T ransition frequency fT V CE= 10V,IC= 10mA, f=100MHz 60 MHz Symbol Para meter Value Unit VCBO Coll ector-Base Voltage 250 V VCE O Coll ector-Emitter Voltage 250 V VEB O Emitter-Base V oltage 5 V IC Coll ector Current 50 mA PC Coll ector Power Dissipation 500 mW RθJA T hermal Resistance From Junction To Ambient 250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~ +150 DA S OT-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

M in Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. www.dgnjdz.com