BF599

BF599 DIOTEC | Alldatasheet

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Technical content

1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 3) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 4 01.11.2003 BF 599 High Freque ncy Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BF 599 Collector-Emitter-voltage B open V CE0 25 V Collector-Base-voltage E open V CB0 40 V Emitter-Base-voltage C open V EB0 4 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 25 mA Base current – Basisstrom (dc) I CM 5 mA Junction temperature – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V I CB0 – – 100 nA IE = 0, VCB = 20 V, Tj = 100/g47CI CB0 – – 10 /g58A Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 10 mA, IB = 1 mA V CEsat – 150 mV – DC current gain – Kollektor-Basis-Stromverhältnis 3) VCE = 10 V, IC = 1 mA h FE 38 70 –

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 501.11.2003 High Frequency Transistors BF 599 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 10 V, IC = 7 mA V BEon – 780 mV – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz f T – 550 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 0.35 pF – Collector-Emitter Capacitance Kollektor-Emitter-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CE0 – 0.68 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Marking - Stempelung BF 599 = NB