BF556A

BF556A PHILIPS | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 29

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C

FEATURES

• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage.

APPLICATIONS

• Impedance converters in e.g. electret microphones and infra-red detectors
• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate‘ CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. Marking codes: BF556A: M84. BF556B: M85. BF556C: M86. handbook, halfpage s dg MAM036Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −± 30 V VGSoff gate-source cut-off voltage I D = 200µA; VDS =1 5V −0.5 −7.5 V IDSS drain current V GS = 0; VDS =1 5V BF556A 3 7 mA BF556B 6 13 mA BF556C 11 18 mA P tot total power dissipation up to T amb =2 5°C − 250 mW yfs forward transfer admittance V GS = 0; VDS =1 5V 4 . 5 − mS

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −± 30 V VGSO gate-source voltage open drain −− 30 V VGDO gate-drain voltage (DC) open source −− 30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to T amb =2 5°C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −30 −− V VGSoff gate-source cut-off voltage ID = 200µA; VDS =1 5V −0.5 −7.5 V IDSS drain current V GS = 0; VDS =1 5V BF556A 3 − 7m A BF556B 6 − 13 mA BF556C 11 − 18 mA IGSS gate leakage current V GS = −20 V; VDS =0 −− 0.5 −5000 pA yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 −− mS yos common source output admittance VGS = 0; VDS =1 5V − 40 −µ S

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C DYNAMIC CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT C is input capacitance V DS = 15 V; VGS = −10 V; f = 1 MHz 1.7 pF VDS = 15 V; VGS = 0; f = 1 MHz 3 pF C rs reverse transfer capacitance V DS = 15 V; VGS = −10 V; f = 1 MHz 0.8 pF VDS = 15 V; VGS = 0; f = 1 MHz 0.9 pF gis common source input conductance V DS = 10 V; ID = 1 mA; f = 100 MHz 15 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 300 µS gfs common source transfer conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 2 mS VDS = 10 V; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse conductance V DS = 10 V; ID = 1 mA; f = 100 MHz −6 µS VDS = 10 V; ID = 1 mA; f = 450 MHz −40 µS gos common source output conductance V DS = 10 V; ID = 1 mA; f = 100 MHz 30 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 60 µS Vn equivalent input noise voltage V DS =1 0V ; ID = 1 mA; f = 100 Hz 40 nV/ √Hz Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. VDS =1 5V . handbook, halfpage 01234567 MRC154 IDSS (mA) VGSoff (V) Fig.3 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. VDS = 15 V; ID =1 µA. handbook, halfpage MRC156 01234567 VGSoff (V) Yfs (mS)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.4 Common-source output conductance as a function of gate-source cut-off voltage; typical values. VDS =1 5V . handbook, halfpage 0 −2 −4 −8 100 MRC153 G os (µS) VGSoff (V) Fig.5 Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. VDS = 100 mV; VGS =0 . handbook, halfpage 024 8 300 100 200 MRC155 R DSon (Ω ) VGSoff (V) Fig.6 Typical output characteristics; BF556A. handbook, halfpage 048 1 6 MRC145 VDS (V) ID (mA) −0.5 V −1 V VGS = 0 V Fig.7 Typical output characteristics; BF556B. handbook, halfpage 0 4 8 12 16 MRC146 VDS (V) ID (mA) VGS = 0 V −2.0 V −0.5 V −2.5 V −1.0 V −1.5 V

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.8 Typical output characteristics; BF556C. handbook, halfpage 048 1 6 MRC147 VDS (V) ID (mA) −1 V −2 V −3 V −4 V −5 V VGS = 0 V Fig.9 Typical input characteristics. handbook, halfpage −6 −4 −20 MRC148 VGS (V) ID (mA) BF556C BF556B BF556A VDS =1 5V . Fig.10 Drain current as a function of gate-source voltage; typical values. handbook, halfpage 0−8 −6 −4 −2 103 102 10−1 10−2 10−3 MRC149 ID (µA) VGS (V) BF556C BF556B BF556A VDS =1 5V . Fig.11 Gate current as a function of drain-gate voltage; typical values. handbook, halfpage −102 −10−2 −10−1 −10 2012480 MRC151 VDG (V) IG (pA) ID = 10 mA IGSS 1 mA 0.1 mA ID = 10 mA only for BF556B and BF556C.

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.12 Gate current as a function of junction temperature; typical values. handbook, halfpage 103 10−1 102 150500−50 MRC150 100 IGSS (pA) Tj (°C) VDS = 0; VGS = −20 V. Fig.13 Power derating curve. MRC166 100 200 300 0 50 100 150 Ptot (mW) Tamb ( C)o Fig.14 Reverse transfer capacitance; typical values. VDS =1 5V . handbook, halfpage 0.2 0.4 0.6 0.8 C rs (pF) VGS (V) MRC134 Fig.15 Input capacitance; typical values. VDS =1 5V . handbook, halfpage MRC140 C is (pF) VGS (V)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.16 Common-source input admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =2 5°C. handbook, halfpage MRC142 102 10−2 10 102 103 10−1 bis gis gis, bis (mS) f (MHz) Fig.17 Common-source transfer admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =2 5°C. handbook, halfpage MRC141 10−1 10 10 2 103 −bfs gfs gfs, −bfs (mS) f (MHz) Fig.18 Common-source reverse admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =2 5°C. handbook, halfpage MRC144 −10−3 −10−2 10 102 103 −10−1 −10 brs grs brs, grs (mS) f (MHz) VDS = 10 V; ID = 1 mA; Tamb =2 5°C. Fig.19 Common-source output admittance; typical values. handbook, halfpage MRC143 10−1 10−2 10 10 2 103 bos gos bos, gos (mS) f (MHz)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C Fig.20 Equivalent noise voltage as a function of frequency. VDS = 10 V; ID = 1 mA. handbook, halfpage f (Hz) 102 103 104 105 103 102 Vn (V) MRC278

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C PACKAGE OUTLINE Fig.21 SOT23. handbook, full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9 Dimensions in mm.

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.