BF554 DIOTEC | Alldatasheet
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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2 01.11.2003 BF 554 High Freque ncy Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BF 554 Collector-Emitter-voltage B open V CE0 20 V Collector-Base-voltage E open V CB0 30 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 30 mA Peak Collector current – Kollektor-Spitzenstrom I CM 30 mA Junction temperature – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V I CB0 – – 100 nA IE = 0, VCB = 20 V, Tj = 100/g47CI CB0 – – 10 /g58A DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 10 V, IC = 1 mA h FE 60 – 250
1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 301.11.2003 High Frequency Transistors BF 554 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 10 V, IC = 1 mA V BEon – 700 mV – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz f T – 250 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 0.6 pF – Noise figure – Rauschzahl at / bei VCE = 10 V, IC = 1 mA f = 200 kHz F – 1.5 dB – f = 1 MHz F – 1.2 dB – f = 100 MHz F – 3 dB – Output admittance – Ausgangs-Leitwert V CE = 10 V, IC = 1 mA, f = 0.5...10 MHz h oe –4 /g58S Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Marking - Stempelung BF 554 = CC