BF550 KEXIN | Alldatasheet
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Features
Low current (max. 25 mA). Low voltage (max. 40 V). PNP Medium Frequency Transistor BF550 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -40 V Collector-emitter voltage V CEO -40 V Emitter-base voltage V EBO -4 V Collector current I C -25 mA Peak collector current I CM -25 mA Total power dissipation * P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO IE =0 ;V cB = -30 V -50 nA Emitter cutoff current I EBO Ic = 0; VEB = -3 V -100 nA DC current gain h FE Ic = -1 mA; VcE =- 1 0V 5 0 Base to emitter voltage V BE Ic = -1 mA; VcE = -10 V 750 mV Feedback capacitance C re Ic = -1 mA; VcB = -10 V; f = 1 MHz 0.5 pF Transition frequency f T IC =- 1m A ;VCE = -10 V; f = 100 MHz 325 MHz Marking Marking LA