BF545A

BF545A PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 29

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors

1996 Jul 29 2

Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C

FEATURES

• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage (max. 2.2 V for BF545A).

APPLICATIONS

• Impedance converters in e.g. electret microphones and infra-red detectors
• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate Fig.1 Simplified outline and symbol. Marking codes: BF545A: M65. BF545B: M66. BF545C: M67. handbook, halfpage s dg MAM036Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 30 V VGSoff gate-source cut-off voltage I D =1 µA; VDS =1 5V −0.4 −7.8 V IDSS drain current V GS = 0; VDS =1 5V BF545A 2 6.5 mA BF545B 6 15 mA BF545C 12 25 mA P tot total power dissipation up to T amb =2 5°C − 250 mW yfs forward transfer admittance V GS = 0; VDS = 15 V 3 6.5 mS

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 30 V VGSO gate-source voltage open drain −− 30 V VGDO gate-drain voltage (DC) open source −− 30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to T amb =2 5°C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 150 MBB688 Ptot (mW) Tamb (°C)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −30 −− V VGSoff gate-source cut-off voltage ID = 200µA; VDS =1 5V BF545A −0.4 −− 2.2 V BF545B −1.6 −− 3.8 V BF545C −3.2 −− 7.8 V ID =1 µA; VDS =1 5V −0.4 −− 7.5 V IDSS drain current V GS = 0; VDS =1 5V BF545A 2 − 6.5 mA BF545B 6 − 15 mA BF545C 12 − 25 mA IGSS gate leakage current V GS = −20 V; VDS =0 −− 0.5 −1000 pA VGS = −20 V; VDS =0 ; Tj= 125°C −−− 100 nA yfs forward transfer admittance VGS = 0; VDS =1 5V 3 − 6.5 mS yos common source output admittance VGS = 0; VDS =1 5V − 40 −µ S

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C DYNAMIC CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT C is input capacitance V DS =1 5V ; VGS = −10 V; f = 1 MHz 1.7 pF VDS =1 5V ; VGS = 0; f = 1 MHz 3 pF C rs reverse transfer capacitance V DS =1 5V ; VGS = −10 V; f = 1 MHz 0.8 pF VDS =1 5V ; VGS = 0; f = 1 MHz 0.9 pF gis common source input conductance VDS =1 0V ; ID = 1 mA; f = 100 MHz 15 µS VDS =1 0V ; ID = 1 mA; f = 450 MHz 300 µS gfs common source transfer conductance VDS =1 0V ; ID = 1 mA; f = 100 MHz 2 mS VDS =1 0V ; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse conductance VDS =1 0V ; ID = 1 mA; f = 100 MHz −6 µS VDS =1 0V ; ID = 1 mA; f = 450 MHz −40 µS gos common source output conductance VDS =1 0V ; ID = 1 mA; f = 100 MHz 30 µS VDS =1 0V ; ID = 1 mA; f = 450 MHz 60 µS Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. VDS = 15 V; Tj=2 5°C. handbook, halfpage −2 −4 −8−6 MBB467 IDSS (mA) VGSoff (V) Fig.4 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. VDS = 15 V; VGS = 0; Tj=2 5°C. handbook, halfpage −2 −4 −8 MBB466 VGSoff (V) Yfs (mS)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.5 Common-source output admittance as a function of gate-source cut-off voltage; typical values. handbook, halfpage −2 −4 −8−6 MBB465 Yos (µS) VGSoff (V) VDS = 15 V; VGS = 0; Tj=2 5°C. Fig.6 Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. VDS = 100 mV; VGS = 0; Tj=2 5°C. handbook, halfpage 300 200 100 −2 −4 −8−6 MBB464 R DSon (Ω ) VGSoff (V) Fig.7 Typical output characteristics; BF545A. Tj=2 5°C. handbook, halfpage 1648 1 2 MBB462 ID (mA) VDS (V) −0.5 V VGS = 0 V −1.0 V Fig.8 Typical input characteristics; BF545A. VDS = 15 V; Tj=2 5°C. handbook, halfpage MBB463 −3 −2 −10 ID (mA) VGS (V)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.9 Typical output characteristics; BF545B. Tj=2 5°C. handbook, halfpage 1648 1 2 MBB460 ID (mA) VDS (V) VGS = 0 V −0.5 V −1 V −1.5 V −2 V −2.5 V Fig.10 Typical input characteristics; BF545B. VDS = 15 V; Tj=2 5°C. handbook, halfpage16 MBB459 −6 −4 −20 ID (mA) VGS (V) Fig.11 Typical output characteristics; BF545C. Tj=2 5°C. handbook, halfpage 1648 1 2 −1 V −2 V −3 V −4 V −5 V MBB457 ID (mA) VDS (V) VGS = 0 V Fig.12 Typical input characteristics; BF545C. VDS = 15 V; Tj=2 5°C. handbook, halfpage30 MBB456 −8 −6 −4 −20 ID (mA) VGS (V)

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.13 Drain current as a function of gate-source voltage; typical values for BF545A. VDS = 15 V; Tj=2 5°C. handbook, halfpage MBB461 0−3 −2 −1 103 102 10−1 10−2 10−3 ID (µA) VGS (V) Fig.14 Drain current as a function of gate-source voltage; typical values for BF545B. VDS = 15 V; Tj=2 5°C. handbook, halfpage MBB458 0−6 −4 −2 103 102 10−1 10−2 10−3 ID (µA) VGS (V) Fig.15 Drain current as a function of gate-source voltage; typical values for BF545C. VDS = 15 V; Tj=2 5°C. handbook, halfpage 0−8 −6 −4 −2 103 102 10−1 10−2 10−3 MBB455 ID (µA) VGS (V) Fig.16 Gate current as a function of drain-gate voltage; typical values. ID = 10 mA only for BF545B and BF545C; Tj=2 5°C. handbook, halfpage 20100 −102 −10 −10−1 −10−2 MBB454 IG (pA) VDG (V) IGSS 1 mA ID = 10 mA 0.1 mA

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.17 Gate current as a function of junction temperature; typical values. VDS = 0; VGS = −20 V. handbook, halfpage −103 −102 −10 −10−1 MBB453 −50 0 50 100 150 IGSS (pA) Tj (°C) Fig.18 Reverse transfer capacitance as a function of gate-source voltage; typical values. VDS = 15 V; Tj=2 5°C. handbook, halfpage1 0.5 MBB452 −10 −50 C rs (pF) VGS (V) Fig.19 Typical input capacitance. handbook, halfpage3 MBB451 −10 −50 C is (pF) VGS (V) VDS = 15 V; Tj=2 5°C. Fig.20 Common-source input admittance; typical values. VDS = 10 V; ID = 1 mA; Tamb =2 5°C. handbook, halfpage102 10−1 10−2 MBB468 102 103 yis (mS) f (MHz) bis gis

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.21 Common-source forward transfer admittance; typical values. handbook, halfpage MBB469 102 10310 102 10–1 f (MHz) Yfs (mS) fsg –bfs VDS = 10 V; ID = 1 mA; Tamb =2 5°C. Fig.22 Common-source reverse transfer admittance; typical values. handbook, halfpage 10−1 10−2 10−3 MBB470 10 10 2 103 yrs (mS) f (MHz) −brs −grs VDS = 10 V; ID = 1 mA; Tamb =2 5°C. Fig.23 Common-source output admittance; typical values. handbook, halfpage 10−1 10−2 MBB471 10 10 2 103 yos (mS) f (MHz) bos gos VDS = 10 V; ID = 1 mA; Tamb =2 5°C.

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C PACKAGE OUTLINE Fig.24 SOT23. handbook, full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9 Dimensions in mm.

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Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.