BF5020

BF5020 INFINEON | Alldatasheet

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Technical content

BF5020... Silicon N-Channel MOSFET Tetrode

• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes
• Excellent noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 EHA07461 GND Drain AGC HF Input HF Output +D C GGV G1R ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF5020 BF5020R BF5020W SOT143 SOT143R SOT343 1 = S 1 = D 1 = D 2 = D 2 = S 2 = S 3 = G2 3 = G1 3 = G1 4 = G1 4 = G2 4 = G2 KYs KYs KYs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current IG1S, IG2S ± 10 mA Gate 1/ gate 2-source voltage VG1S, VG2S ± 6 V Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150

BF5020... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF5020, BF5020R BF5020W Rthchs ≤ 370 ≤ 280 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage I D = 20 µA, VG1S = 0 , VG2S = 0 V(BR)DS 12 - - V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 6 - 15 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 +V(BR)G2SS 6 - 15 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 +IG1SS - - 50 nA Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 +IG2SS - - 50 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V IDSS - - 100 Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ IDSX - 14 - mA Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) - 0.7 - V Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA, VG1S = 2 V VG2S(p) - 0.7 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

BF5020... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V gfs - 34 - mS Gate1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Cg1ss - 2.4 - pF Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V Cdss - 1 - Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz Gp dB Noise figure V DS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 45 MHz F 1.2 0.8 dB Gain control range V DS = 5 V, VG2S = 4...0 V ∆Gp - 45 - Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ AGC = 0 AGC = 10 dB AGC = 40 dB Xmod 106 dBµV 1Input level for k = 1%; fw = 50 MHz, funw = 60 MHz

BF5020... Total power dissipation Ptot = ƒ(TS) BF5020, BF5020R 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mW 220 Ptot Total power dissipation Ptot = ƒ(TS) BF5020W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mA 220 Ptot Output characteristics ID = ƒ(VDS) 0 2 4 6 8 V 12 VDS mA ID 1.3V 1.4V 1.5V 1.2V 1.1V Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter 0 0.5 1 1.5 2 V 3 VG1S 100 120 140 µA 180 IG1 4V 3.5V 2.5V

BF5020... Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 0 5 10 15 20 25 30 35 mA 45 ID mS gfs 1.5V Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S mA ID 4 V 3 V 2 V 1.5 V 1 V Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 120 kΩ (connected to VGG, VGG=gate1 supply voltage) 0 1 2 3 V 5 VGG mA ID Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 0 1 2 3 4 V 6 VGG=VDS mA ID 120K 100K 82K 150K 180K 68K

BF5020... Drain current ID = ƒ(VG2S) VDS = 5 V, RG1 = Parameter in kΩ 0 0.5 1 1.5 2 2.5 3 V 4 VG2S mA ID 120K 82K AGC characteristic AGC = ƒ(VG2S) f = 50 MHz measured in test circuit, see page 7 0.5 1 1.5 2 2.5 3 V 4 VG2S -80 -70 -60 -50 -40 -30 -20 dB AGC Rg=120KOHm Rg=82KOHm AGC characteristic AGC = ƒ(VG2S) f = 800 MHz measured in test circuit, see page 7 0.5 1 1.5 2 2.5 3 V 4 VG2S -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 dB AGC Rg1=82KOHmRg1=120KOHm Crossmodulation Vunw = (AGC) VDS = 5 V measured in test circuit, see page 7 0 5 10 15 20 25 30 35 40 dB 50 AGC 100 101 102 103 104 dBµV 107 Vunw RG1=82KOHm_22m RG1=120KOHm_15m

BF5020... Test circuit for Crossmodulation / AGC RG1 4n7 4n7 RL 50Ω 50 Ω RGEN 50Ω VGG 10kΩ VAGC VDS 4n7 4n7 2.2 uH Semibiased

BF5020...Package SOT143 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel RF s 2005, June Date code (YM) BFP181 Type code Pin 1 0.8 0.81.2 0.9 1.1 0.9 1.2 0.8 0.8 0.8 -0.05 +0.1 1.9 1.7 ±0.12.9 +0.1 -0.050.4 0.1 MAX.

0.25 M B

±0.11 10˚ MAX. 0.15 MIN. 0.2 AM 2.4 ±0.15 0.2 10˚ MAX.A 1.3 ±0.1 0...8˚ 2.6 3.15Pin 1 0.2 1.15 B Manufacturer

BF5020...Package SOT143R 1.1 0.8 0.81.2 0.90.9 0.8 0.8 1.2 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2.6 3.15Pin 1 0.2 1.15 Reverse bar 2005, June Date code (YM) BFP181R Type code Pin 1 1.9 1.7 0.4-0.05 +0.1 +0.1 -0.050.8 B 2.9 ±0.1 0.2 A 0˚... 8˚ 10˚ 10˚ 0.1 MAX. 0.15 MIN. 1.3±0.1 2.4 ±0.15 1±0.1 AM0.2 MAX. MAX. Manufacturer

BF5020...Package SOT343 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code (YM) BGA420 Type code 0.24 2.15 2.3 1.1Pin 1 0.6 0.8 1.6 1.15 0.9 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.050.3 +0.1 2±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. Pin 1 Manufacturer

BF5020... Edition 2006-02-01 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.