BF494 FAIRCHILD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BF494 Rev. A BF494 NPN RF Transistor tm July 2006 BF494 NPN RF Transistor Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulte d on applications involving pulsed or low duty cycle operations Thermal Characteristics Electrical Characteristics* TC = 25°C unless otherwise noted * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C Symbol Parameter Value Unit PD Total Device Dissipation, by RθJA Derate above 25°C 350 2.8 mW mW/°C RθJC Thermal Resistance, Junction to case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V V(BR)CBO Collector-Base BreakdownVoltage IC = 10µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V 10 nA hFE DC Current Gain VCE = 10V, IC = 1mA 67 222 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.92 V VBE(ON) Base-Emitter On Voltage VCE = 10V, IC = 10mA 650 740 mV 1. Collector 2. Emitter 3. Base TO-92
2 www.fairchildsemi.com BF494 Rev. A BF494 NPN RF Transistor Package Dimensions Dimensions in Millimeters 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58 +0.25 –0.15 0.38 +0.10 –0.05 0.38 +0.10 –0.05 TO-92
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. BF494 NPN RF Transistor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE- CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in th e labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FAST FASTr™ FPS™ FRFET™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ Rev. I20 3 www.fairchildsemi.com BF494 Rev. A BF494 NPN RF Transistor