BF422 DCCOM | Alldatasheet

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for video B-class power stages in TV receivers. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Total Power Dissipation PD 830 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 250 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 250 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA Collector Cutoff Current ICBO - - 0.1 µA VCB=200V Emitter Cutoff Current IEBO - - 10 µA VEB=5V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=30mA, IB=3mA DC Current Gain(1) hFE 50 - - - IC=25mA, VCE=20V Transition Frequency fT 60 - - MHz IE=10mA, VCE=10V, f=100MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%