BF421 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA ■ SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS BF420
APPLICATIONS
■ VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) ■ TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) INTERNAL SCHEMATIC DIAGRAM February 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -300 V V CEO Collector-Emitter Voltage (IB = 0) -300 V V EBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -500 mA ICM Collector Peak Current (tp < 5ms) -600 mA P tot Total Dissipation at TC = 25 oC 830 mW Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC Ordering Code Marking Package / Shipment BF421 BF421 TO-92 / Bulk BF421-AP BF421 TO-92 / Ammopack TO-92 Bulk TO-92 Ammopack
R thj-amb • R thj-Case • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max 150 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = -200 V V CB = -200 V TC = 150 oC V CB = -300 V -10 -10 -100 nA µ A µ A IEBO Emitter Cut-off Current (IC = 0) V EB = -5 V -50 nA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -300 V V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -10 µ A -300 V V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100 µA -5 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -0.6 V V BE(sat)∗ Base-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -1.2 V hFE ∗ DC Current Gain I C = -25 mA VCE = -20 V 50 fT Transition Frequency I C = -10 mA VCE = -10 V f =100MHz 60 MHz C RE Reverse Capacitance I E = 0 VCB = -30 V f = 1MHz 1.6 pF ∗ Pulsed: Pulse duration ≤ 300 µs, duty cycle ≤ 2 % BF421
DIM. mm inch A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree TO-92 MECHANICAL DATA BF421
DIM. mm inch A1 4.80 0.189 T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091 d 0.48 0.019 delta H -2.00 2.00 -0.079 0.079 W2 0.50 0.020 H 18.50 20.50 0.728 0.807 H1 25.00 0.984 t 0.90 0.035 L 11.00 0.433 I1 3.00 0.118 delta P -1.00 1.00 -0.039 0.039 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA BF421
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com BF421