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WEJ ELECTRONIC CO.,LTD BF370 TRANSISTOR (NPN)
FEATURES
P CM: 0.5 W (Tamb=25 ℃ ) Collector current I CM: 0 . 1 A Collector-base voltage V (BR)CBO: 4 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, I B=0 15 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4.5 V Collector cut-off current ICBO V CB= 20V, IE=0 0.4 µA Emitter cut-off current IEBO V EB= 2V, IC=0 0.1 µA DC current gain hFE V CE= 1V, IC= 10mA 40 200 Collector-emitter saturation voltage VCE(sat) I C=15mA, IB=1.5 mA 0.2 V Base-emitter saturation voltage VBE(sat) I C=15mA, IB=1.5 mA 1.2 V Transition frequency fT VCE= 10V, IC=10mA f =100MHz
500 MHz
- COLLECTOR 2. BASE 3. EMITTER B F370 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS