BF246A PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 29

BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors

1996 Jul 29 2

Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C

FEATURES

  • Interchangeability of drain and source connections
  • High IDSS range
  • Frequency up to 450 MHz.

APPLICATIONS

  • VHF and UHF amplifiers
  • Mixers
  • General purpose switching.

DESCRIPTION

General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION BF246A; BF246B; BF246C 1 d drain 2 g gate 3 s source BF247A; BF247B; BF247C 1 d drain 2 s source 3 g gate Fig.1 Simplified outline (TO-92 variant) and symbol. handbook, halfpage MAM257 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −−± 25 V VGSoff gate-source cut-off voltage ID = 10 nA; VDS =1 5V −0.6 −− 14.5 V IDSS drain current V DS = 15 V; VGS =0 BF246A; BF247A 30 − 80 mA BF246B; BF247B 60 − 140 mA BF246C; BF247C 110 − 250 mA Ptot total power dissipation up to T amb =5 0°C −− 400 mW yfs forward transfer admittance ID = 10 mA; VDS =1 5V ; f=1k H z 8 −− mS C rs reverse transfer capacitance ID = 10 mA; VDS =1 5V ; f=1M H z − 3.5 − pF Tj operating junction temperature −− 150 °C

1996 Jul 29 3

Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. Note 1. Measured under pulse conditions: tp = 300µs;δ≤ 0.02. DYNAMIC CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 25 V IG gate current − 10 mA Ptot total power dissipation up to T amb =5 0°C − 400 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −25 −− V VGSoff gate-source cut-off voltage ID = 10 nA; VDS =1 5V −0.6 −− 14.5 V VGS gate-source voltage I D = 200µA; VDS =1 5V BF246A; BF247A −1.5 −− 4.0 V BF246B; BF247B −3.0 −− 7.0 V BF246C; BF247C −5.5 −− 12.0 V IDSS drain current V GS = 0; VDS = 15 V; note 1 BF246A; BF247A 30 − 80 mA BF246B; BF247B 60 − 140 mA BF246C; BF247C 110 − 250 mA IGSS gate leakage current V GS = −15 V; VDS =0 −−− 5n A SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C is input capacitance I D = 10 mA; f = 1 MHz; VDS =1 5V − 11 − pF C rs reverse transfer capacitance ID = 10 mA; f = 1 MHz; VDS =1 5V − 3.5 − pF C os output capacitance I D = 10 mA; f = 1 MHz; VDS =1 5V − 5 − pF yfs forward transfer admittance ID = 10 mA; f = 1 kHz; VDS =1 5V 8 1 7 − mS fgfs cut-off frequency g fs= 0.7 of its value at 1 kHz; VGS =0 − 450 − MHz

1996 Jul 29 4

Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C PACKAGE OUTLINE Fig.2 TO-92 variant. Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. handbook, full pagewidth MBC015 - 1 2.544.8 max 4.2 max 0.66 0.56 5.2 max 12.7 min 2.5 max(1) 0.48 0.40 0.40 min 1.7 1.4

1996 Jul 29 5

Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.