BF244A_1 FAIRCHILD | Alldatasheet
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This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BF244A / BF244B / BF244C PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage - 30 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA Tstg Storage Temperature Range -55 to +150 °C S G D TO-92 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C
Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain CurrentVDS = 15 V, VGS = 0 244A 244B 244C 2.0 6.0 6.5 mA mA mA SMALL SIGNAL CHARACTERISTICS yfs Forward Transfer Admittance V DS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz 3.0 5.6 6.5 mmhos mmhos yos Output Admittance V DS = 15 V, VGS = 0, f = 1.0 kHz 40 µmhos yrs Reverse Transfer Admittance V DS = 15 V, VGS = 0, f = 200 MHz 1.0 µmhos C iss Input Capacitance V DS = 20 V, VGS = - 1.0 V 3.0 pF C rss Reverse Transfer Capacitance V DS = 20 V, VGS = - 1.0 V, f = 1.0 MHz 0.7 pF C oss Output Capacitance V DS = 20 V, VGS = - 1.0 V, f = 1.0 MHz 0.9 pF NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 kΩ , f = 100 MHz 1.5 dB F(Yfs) Cut-Off Frequency V DS = 15 V, VGS = 0 700 MHz Typical Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 30 V IGSS Gate Reverse Current V GS = - 20 V, VDS = 0 5.0 nA VGSS(off) Gate-Source Cutoff Voltage V DS = 15 V, ID = 10 nA - 0.5 - 8.0 V VGS Gate-Source Voltage VDS = 15 V, ID = 200 µA 244A 244B 244C - 0.4 - 1.6 - 3.2 - 2.2 - 3.8 - 7.5 V V V Transfer Characteristics -5-4-3-2-10 V - GATE-SOURCE VOLTAGE(V) I - DRAIN CURRENT (mA)D GS(O FF)V = -4.5V V = 15VDS T = +25 CA O -2.5 V T = -55 C O A T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O GS Channel Resistance vs Temperature -50 0 50 100 150 100 200 300 500 1000 T - AMBIENT TEMPERATURE ( C) r - DRAIN ON RESIST ANCE ( ) Ω V = -1.0VGS(OFF ) -2.5 V -5.0V -8.0 V V = 100mVDS V = 0 VGS DS A BF244A / BF244B / BF244C N-Channel RF Amplifier (continued)
Typical Characteristics (continued) N-Channel RF Amplifier (continued) Common Drain-Source Characteristics 0 0.2 0.4 0.6 0.8 1 V - DRAIN-SOURCE VOLT AGE(V) I -- DRAI N CURRENT (mA) V = 0VGS -2.5V DS -0.5V -4.0V -2.0V -1.0V -3.5V -3.0V -1.5V T = +25 CA O TYP V = -5.0VGS(OFF) D Output Conductance vs Drain Current 0.1 0.5 I -- DRAIN CURRENT (mA) gos -- OUTPUT CONDUCTANCE (u mhos) D 1510 T = +25 CA O f = 1.0 kHz 15V 10V 5. 0V 20V V = 5v DG V = -5.5VGS (O F F) V = -3.5VGS (O F F) V = -1.5VGS (O F F) Transconductance Parameter Interactions 12 3 5 7 1 0 100 V - GATE-SOURCE VOLTAGE(V) r -- DRAIN "ON" RESISTANCE ( ) gfs --- TRANSCONDUCTANCE ( mmhos ) GS I -- DRAIN CURRENT ( mA )DSS DS Ω gfs, I @ V = 15 V, V = 0 PULSEGSDSDSS r @ V = 100mV, V = 0GSDSDS V @ V = 15V, I = 1nAGS(O FF) GS D - ----- Noise Voltage vs Frequency 0.01 0.03 0.1 0.3 1 3 10 30 100 f -- FREQUENCY (kHz) e - NOISE VOLTAG E ( nV/ Hz ) V = 15VDG BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz I = 0.5 mAD I = 3 mADn Transconductance Characteristics -5-4-3-2-10 V - GA TE-SOURCE VOL TAGE(V) gfs -- TRANSCONDUCTANCE (mmhos) V = -4.5VGS(OFF) V = 15VDS T = +25 CA O -2.5 V T = -55 C O A T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O GS Transconductance vs Drain Current 0.1 0.5 I - DRAIN CURRENT (mA)D V = - 5VGS(OFF) V = - 1.5VGS(OFF) T = -55 C O A T = +25 CA O T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O V = 15V f = 1.0 kHz DG
Typical Characteristics (continued) Capacitance vs Voltage -20-15-10-50 V -- GATE-SOURCE VOL T AGE(V) C ( C ) -- CAPACIT ANCE (pF) GS is rs C ( V = 0 V) C ( V = 15 V)DS DS is rs f = 0.1 - 1.0 MHz Noise Figure Frequency 10 20 30 50 100 200 300 500 1000 f -- FREQUENCY (MHz) NF -- NOISE FIGURE (dB) V = 15VDS I = 5.0 mA R = 1.0 k T = +25 CA O Ω D g Common Gate Characteristics Input Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- INPUT ADMITT ANCE (mmhos) V = 15V V = 0GS DS (CG) g igs igs b igs Output Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- OUTPUT CONDUCTANCE (mmhos) V = 15V V = 0GS DS (CG) ogs b (x 10)Og S g Ogs Reverse Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- REVERSE TRANSFER (mmhos)rgs V = 15V V = 0GS DS (CG) g rgs - brgs Forward Transadmittance 100 200 300 500 700 1000 f -- FR EQU ENC Y (MHz ) Y -- FORWARD TRANSFER (mmhos) V = 15V V = 0GS DS (CG) -bfgs fgs +g fgs BF244A / BF244B / BF244C N-Channel RF Amplifier (continued)
(continued) Common Source Characteristics Input Admittance 100 200 300 500 700 1000 f -- FRE QUE NCY (MHz) Y -- INPUT ADMITT ANCE (mmhos) V = 15V V = 0GS DS (CS) g iss is s b iss Output Admittance 100 200 300 500 700 1000 f -- FREQUE NCY (MHz) Y -- OUTPUT CONDUCTANCE (mmhos) V = 15V V = 0GS DS (CS) OSS b (x 10)OSS g OSS Forward Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- FORWARD TRANSFER (mmhos) V = 15V V = 0GS DS (CS) -bfss fss +g fss Reverse Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- REVERSE TRANSFER (mmhos)rss V = 15V V = 0GS DS (CS) - b -g ( X 0.1)rss rss
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