BF244C

BF244A FAIRCHILD | Alldatasheet

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This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BF244A / BF244B / BF244C PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage - 30 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA Tstg Storage Temperature Range -55 to +150 °C S G D TO-92  1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain CurrentVDS = 15 V, VGS = 0 244A 244B 244C 2.0 6.0 6.5 mA mA mA SMALL SIGNAL CHARACTERISTICS yfs Forward Transfer Admittance V DS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz 3.0 5.6 6.5 mmhos mmhos yos Output Admittance V DS = 15 V, VGS = 0, f = 1.0 kHz 40 µmhos yrs Reverse Transfer Admittance V DS = 15 V, VGS = 0, f = 200 MHz 1.0 µmhos C iss Input Capacitance V DS = 20 V, VGS = - 1.0 V 3.0 pF C rss Reverse Transfer Capacitance V DS = 20 V, VGS = - 1.0 V, f = 1.0 MHz 0.7 pF C oss Output Capacitance V DS = 20 V, VGS = - 1.0 V, f = 1.0 MHz 0.9 pF NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 kΩ , f = 100 MHz 1.5 dB F(Yfs) Cut-Off Frequency V DS = 15 V, VGS = 0 700 MHz Typical Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 30 V IGSS Gate Reverse Current V GS = - 20 V, VDS = 0 5.0 nA VGSS(off) Gate-Source Cutoff Voltage V DS = 15 V, ID = 10 nA - 0.5 - 8.0 V VGS Gate-Source Voltage VDS = 15 V, ID = 200 µA 244A 244B 244C - 0.4 - 1.6 - 3.2 - 2.2 - 3.8 - 7.5 V V V Transfer Characteristics -5-4-3-2-10 V - GATE-SOURCE VOLTAGE(V) I - DRAIN CURRENT (mA)D GS(O FF)V = -4.5V V = 15VDS T = +25 CA O -2.5 V T = -55 C O A T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O GS Channel Resistance vs Temperature -50 0 50 100 150 100 200 300 500 1000 T - AMBIENT TEMPERATURE ( C) r - DRAIN ON RESIST ANCE ( ) Ω V = -1.0VGS(OFF ) -2.5 V -5.0V -8.0 V V = 100mVDS V = 0 VGS DS A BF244A / BF244B / BF244C N-Channel RF Amplifier (continued)