BF2040

BF2040 INFINEON | Alldatasheet

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Technical content

BF2040... Silicon N-Channel MOSFET Tetrode

• For low noise , high gain controlled input stages up to 1GHz
• Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 BF2040R BF2040W SOT143 SOT143 SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 NFs NFs NF Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 20 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 7 V Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF2040, BF2040R BF2040W Rthchs ≤ 370 ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BF2040...

Electrical Characteristics

Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage I D = 20 µA, VG1S = 0 , VG2S = 0 V(BR)DS 10 - - V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 6 - 15 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 +V(BR)G2SS 6 - 15 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 +IG1SS - - 50 nA Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 +IG2SS - - 50 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V IDSS - - 50 µA Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ IDSX - 15 - mA Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) 0.3 0.6 - V Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA VG2S(p) 0.3 0.7 -

BF2040... Parameter Symbol Values Unit min. typ. max. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, ID = 15 mA, VG2S = 4 V gfs 37 42 - mS Gate1 input capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 1 MHz Cg1ss - 2.9 3.4 pF Output capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 1 MHz Cdss - 1.6 - Power gain VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz Gp 20 23 - dB Noise figure VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz F - 1.6 2.2 dB Gain control range VDS = 5 V, VG2S = 4 ...0 V , f = 800 GHz ∆Gp 45 50 -

BF2040... Total power dissipation Ptot = ƒ(TS) BF2040, BFD2040R 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mW 220 Ptot Total power dissipation Ptot = ƒ(TS) BF2040W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mA 220 Ptot Drain current ID = ƒ(IG1) VG2S = 4V 0 10 20 30 40 50 60 70 µA 90 IG1 mA ID Output characteristics ID = ƒ(VDS) VG2S = 4 V VG1S = Parameter 0 1 2 3 4 5 6 7 8 V 10 VDS mA ID 1.2V 1.3V 1.4V 1.1V

BF2040... Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S 105 120 135 150 165 µA 195 IG1 3.5V 2.5V Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 0 4 8 12 16 20 24 28 32 mA 40 ID mS gfs 2.5V 3.5V Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S mA ID 1.5V Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 80kΩ (connected to VGG, VGG=gate1 supply voltage) 0 1 2 3 V 5 VGG mA ID

BF2040... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 0 1 2 3 4 5 6 V 8 VGG=VDS mA ID 110 130