BF2030 INFINEON | Alldatasheet
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Technical content
BF2030... Silicon N-Channel MOSFET Tetrode
- For low noise, high gain controlled input stages up to 1GHz
- Operating voltage 5V EHA07461 GND Drain AGC HF Input HF Output +D C GGV G1R ESD: Electrostatic discharge sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 BF2030R BF2030W SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 NDs NDs ND Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 20 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 6 V Total power dissipation TS ≤ 76 °C, BF2030, BF2030R TS ≤ 94 °C, BF2030W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150
BF2030... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF2030/ BF2030R BF2030W Rthchs ≤370 ≤280 K/W
Electrical Characteristics
Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage I D = 20 µA, VG1S = 0 , VG2S = 0 V(BR)DS 10 - - V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 6 - 15 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 +V(BR)G2SS 6 - 15 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 +IG1SS - - 50 nA Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 +IG2SS - - 50 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V IDSS - - 50 µA Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ IDSX - 12 - mA Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) 0.3 0.5 - V Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA VG2S(p) 0.3 0.6 - 1For calculation of RthJA please refer to Application Note Thermal Resistance
BF2030... Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V gfs 27 31 - mS Gate1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cg1ss - 2.4 2.8 pF Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Cdss - 1.3 - Power gain VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gp 20 23 - dB Noise figure VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz F - 1.5 2.2 dB Gain control range VDS = 5 V, VG2S = 4...0 V, f = 800 MHz ∆Gp 40 50 -
BF2030... Total power dissipation Ptot = ƒ(TS) BF2030, BF2030R 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mW 220 Ptot Total power dissipation Ptot = ƒ(TS) BF2030W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mA 220 Ptot Drain current ID = ƒ(IG1) VG2S = 4V 0 10 20 30 40 50 60 70 80 µA 100 IG1 mA ID Output characteristics ID = ƒ(VDS) VG2S = 4V VG1S = Parameter 0 1 2 3 4 5 6 7 8 V 10 VDS mA ID 1.4V 1.3V 1.2V 1.1V 0.8V
BF2030... Gate 1 current IG1 = ƒ(VG1S) VDS = 5V VG2S = Parameter VDS 105 120 135 150 165 180 µA 210 IG1 3.5V 2.5V Gate 1 forward transconductance gfs = ƒ(ID) VDS = 5V, VG2S = Parameter 0 4 8 12 16 20 24 mA 30 ID mS gfs 2.5V Drain current ID = ƒ(VG1S) VDS = 5V VG2S = Parameter VG1S mA ID 1.5V Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 100kΩ (connected to VGG, VGG=gate1 supply voltage) 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGG mA ID
BF2030... Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 0 1 2 3 4 5 6 V 8 VGG=VDS mA ID 100 120 Crossmodulation Vunw = (AGC) VDS = 5 V 0 10 20 30 40 dB 55 AGC 100 105 110 dBµV 120 Vunw Cossmodulation test circuit 4n7 4n7 VGG VAGC VDS 4n7 2.2 µHR1 10 kOhm RL